DMN4009LK3-13

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DMN4009LK3-13 is a power field-effect transistor that belongs to the family of single n-channel MOSFETs. This type of transistor is highly efficient for the switching and boosting of DC voltages in a variety of applications. It is designed for low-side switching and low-side pre-charging operations in DC-to-DC converters.

The DMN4009LK3-13 is a power MOSFET with a current rating of up to 40A and an avalanche current rating of 90A (at a temperature of 25 ℃). It is capable of handling peak pulse currents at elevated temperatures when used in the right application. It has a low gate charge, which reduces switching losses, and a very low on-resistance of 42mΩ max at 4.5V gate drive. This is ideal for applications that require high switching performance and low power dissipation. The DMN4009LK3-13 is designed to handle high-side and low-side switching applications in a variety of power converters and switching regulators, such as buck and boost converters, synchronous rectification, phase-shifted full-bridge (PSFB) converters, and resonant converters.

The working principle of the DMN4009LK3-13 is based on the concept of an n-channel MOSFET. It is composed of an insulated gate, a source, and a drain. N-channel MOSFETs are constructed in such a way that the gate is isolated from the source and drain. When the gate of the MOSFET is subjected to a positive voltage, electrons are attracted to the positive gate, creating a depletion region (or a high-resistance path) between the source and drain, which results in the transistor becoming ‘ON’. When the gate voltage is removed, the depletion region is eliminated, and the transistor switches back to the ‘OFF’ state.

The DMN4009LK3-13 N-channel MOSFET has a low gate threshold voltage and low gate charge, making it highly efficient in low-voltage switching applications. Its low on-resistance of 42mΩ max and its low gate capacitances make it ideal for high-speed switching applications. The DMN4009LK3-13 is also capable of handling high-side and low-side pre-charging operations, as well as low-side synchronous rectification in DC/DC converters.

In conclusion, the DMN4009LK3-13 is an efficient and reliable power transistor that is applicable to a wide range of switching and boosting applications. It has a low gate threshold voltage and low gate charge, making it highly efficient in low-voltage switching applications. It is also capable of handling peak pulse currents at elevated temperatures. With its low on-resistance of 42mΩ max and its low gate capacitances, it is ideal for high-speed switching applications. It is designed for both high-side and low-side switching operations in a variety of power converters and switching regulators.

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