| Allicdata Part #: | DMN4020LFDE-13DITR-ND |
| Manufacturer Part#: |
DMN4020LFDE-13 |
| Price: | $ 0.13 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 40V 8A U-DFN2020-6 |
| More Detail: | N-Channel 40V 8A (Ta) 660mW (Ta) Surface Mount U-D... |
| DataSheet: |  DMN4020LFDE-13 Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.11436 |
| Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
| Package / Case: | 6-UDFN Exposed Pad |
| Supplier Device Package: | U-DFN2020-6 (Type E) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 660mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 19.1nC @ 20V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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DMN4020LFDE-13 is a P channel enhancement MOS transistor from Diodes Inc. It\'s a high-power, low-voltage transistor with very low on-resistance and low gate charge. This device is perfect for high current and power applications such as power converters, motor controls and chargers.
The DMN4020LFDE-13 is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that uses a gate to control the flow of current. It\'s a single N-channel MOSFET, meaning it has one terminal that acts as the gate. It has a high-current carrying capacity and low gate charge, making it ideal for power applications.
The DMN4020LFDE-13 has a drain-source on resistance of 0.007 ohms, allowing it to handle high-current applications. It also has a Vth (Turn-on Threshold Voltage) of 2.5V and a gate-source threshold voltage of 2.5V which ensures superior turn-on and turn-off performance. The drain-to-source breakdown voltage is also 31V. This breakdown voltage allows for higher voltage levels to be applied, making it able to handle more power.
The DMN4020LFDE-13 is a high-power, low-voltage MOSFET. Its low on-resistance and low gate charge make it ideal for high-current and power applications. The low voltage and high current capabilities make it suitable for applications such as power converters, motor controls and chargers. Its drain-to-source breakdown voltage and high-current capabilities allow it to handle higher-power applications. The device also has superior turn-on and turn-off performance, making it reliable and efficient in its applications.
The DMN4020LFDE-13 is a great choice for applications that require high current and low voltage. Its low on-resistance and low gate charge make it perfect for high power and high current applications. It\'s also reliable and efficient in its performance. This makes the DMN4020LFDE-13 a great option for use in power applications such as power converters, motor controllers, and chargers.
The specific data is subject to PDF, and the above content is for reference
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