
Allicdata Part #: | DMN4031SSD-13DITR-ND |
Manufacturer Part#: |
DMN4031SSD-13 |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 40V 5.2A 8SO |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 5.2A 1.42W Sur... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.18000 |
10 +: | $ 0.17460 |
100 +: | $ 0.17100 |
1000 +: | $ 0.16740 |
10000 +: | $ 0.16200 |
Specifications
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | DMN4031 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.42W |
Input Capacitance (Ciss) (Max) @ Vds: | 945pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs: | 18.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 31 mOhm @ 6A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.2A |
Drain to Source Voltage (Vdss): | 40V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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The DMN4031SSD-13 Full Pack MOSFET (FET) arrays are developed by the Power System Division (PSD) of the University of Texas at Austin Power Electronics Laboratory. This FET array is designed to support high power and low-voltage applications. The DMN4031SSD-13 is composed of two FETs with independent current and voltage ratings as well as gate voltage. It provides a very efficient power system solution and has a wide range of applications.The DMN4031SSD-13 has two MOSFETs which are matched for both forward and reverse current paths. This allows for more efficient power flow. The FET array has a very low on-resistance, which helps reduce power loss and help maintain low power consumption. The FETs are also designed with high current density and low leakage, which further helps reduce power consumption. The FETs also feature a size percentage that is smaller than those of the other FET arrays. It is also designed with shorter delay times, making it suitable for high-speed applications.The gate voltage supplied to the DMN4031SSD-13 is adjustable. The FET array can also be configured for either forward or reverse current paths, depending on the needs of the application. In addition, the FET array can be used in conjunction with a Peltier effect module to allow for more efficient thermal management.The DMN4031SSD-13 FET array is capable of handling large amounts of power. The FETs are able to withstand large currents, making them ideal for use in power supply applications. The FETs also feature high output current density, making them suitable for high power applications. The FETs are also designed to be very reliable and efficient, which helps reduce downtime.The working principle of the DMN4031SSD-13 is based on the principles of MOSFETs. The FET array takes advantage of the properties of MOSFETs to achieve its goals. The FETs are designed with a very low on-resistance, which helps reduce power loss and helps maintain low power consumption. The FETs are also designed with high current density and low leakage, further helping to reduce power consumption. The FETs also feature a size percentage that is smaller than those of other FET arrays, making it suitable for high-speed applications.The DMN4031SSD-13 is an ideal solution for Stacked FET Arrays, power systems, and power supply applications. It is highly reliable, efficient and provides continuous flow of energy. The FET arrays can provide high current in small packages, making them suitable for use in many applications. Its adjustable gate voltage and the ability to configure for either forward or reverse current paths make it ideal for many applications. The FETs also feature high current density and low leakage, making them suitable for high power applications. Furthermore, its small size and low power consumption make it suitable for applications in both large and small systems.In conclusion, the DMN4031SSD-13 is an ideal choice for many applications. Its low on-resistance, high current density and small size, make it suitable for use in both large and small power systems. Moreover, its adjustable gate voltage and ability to configure for either forward or reverse current paths make it an ideal choice for many applications. Finally, its low power consumption, high reliability and efficiency make it suitable for applications in both large and small systems.
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