DMN4026SSDQ-13 Allicdata Electronics
Allicdata Part #:

DMN4026SSDQ-13DITR-ND

Manufacturer Part#:

DMN4026SSDQ-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 40V 7A 8SO
More Detail: Mosfet Array 2 N-Channel (Dual) 40V 7A 1.3W Surfac...
DataSheet: DMN4026SSDQ-13 datasheetDMN4026SSDQ-13 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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DMN4026SSDQ-13 Application Field and Working Principle

DMN4026SSDQ-13 is a dual-MOSFET array formed by four N-channel MOSFETs that can operate effectively and efficiently with dual terminals, which is an essential part in the power transistor applications. The primary fields in which these transistors are used include motor control and battery management systems. This article will discuss the application fields and working principle of this dual-MOSFET array.

Application Fields

DMN4026SSDQ-13 has a wide application field with its dual-terminal, highly efficient N-channel MOSFETs. One of the main applications is motor control. The array has a low on-resistance value which is less than 10-ohm. This provides the low-level amplification to the gate voltage of the MOSFETs and offers efficient control of the motor speeds. Another application of the array is in battery management systems. It is used to provide an efficient connection and regulation to the battery, thus improving its charge-discharge cycle and life. The array is also used for low-side DC/DC switching regulation, thus being an essential part of power conversion and management.

Working Principle

The DMN4026SSDQ-13 is made of four N-channel MOSFETs which are connected in parallel by two terminals. The MOSFETs are designed to work in the dual-gate mode, in which two terminals provide the two gates for the two MOSFETs respectively. The low on-resistance value, of less than 10-ohm, allows the array to work effectively by providing a low-level amplification to the gate voltage, thus enabling efficient control of the motor speeds or charging and discharging of the battery.

The DMN4026SSDQ-13 is also designed to provide over-current protection. An over-current lockout circuit is built into the array, which monitors the current and shuts down the array in the case of an overload. This circuit makes the DMN4026SSDQ-13 a reliable and safe choice for power transitions.

Conclusion

DMN4026SSDQ-13 is a dual-MOSFET array comprising of four N-channel MOSFETs which can be operated efficiently with two terminals. It is designed for low-level amplification and can be used for motor control, battery management, and low-side DC/DC switching regulation. The array also provides over-current protection which ensures its reliable operation.

The specific data is subject to PDF, and the above content is for reference

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