
Allicdata Part #: | DMN4800LSSL-13DITR-ND |
Manufacturer Part#: |
DMN4800LSSL-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 8A 8-SO |
More Detail: | N-Channel 30V 8A (Ta) 1.46W (Ta) Surface Mount 8-S... |
DataSheet: | ![]() |
Quantity: | 5000 |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.46W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 798pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.7nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMN4800LSSL-13 is an N-channel MOSFET, commonly used as a transistor in modern electrical systems. It has a wide variety of applications across diverse industries, making it a popular choice for many electronic systems. This article will discuss the application fields of the DMN4800LSSL-13, as well as its working principle.
Application Fields
The DMN4800LSSL-13 is very versatile, and can be used in a wide range of applications. It is a popular choice for digital power applications, as it can handle high currents, making it ideal for switching applications. It is also used in industrial motor control applications, where it can be used to regulate the current in a system. Additionally, it is often used in AC/DC converters, as it helps to reduce power losses in the system. Finally, it is often used in automotive applications, such as computer controlled regulators or for signal conditioning.
Working Principle
The DMN4800LSSL-13 is an N-channel, enhancement-mode MOSFET, which means it controls electrical current by applying a voltage to its gate. The gate is insulated from the N-channel by a thin oxide layer and is used to control the current flow through the channel. When voltage is applied to the gate, it creates an electric field which attracts negatively charged electron carriers from the N-channel, reducing the number of free carriers in the channel and reducing its conductivity. Thus, the amount of current that can flow through the channel is controlled by changing the voltage on the gate.
The DMN4800LSSL-13 has an on-state resistance (Rds) of 1.5 Ohms and a maximum drain current (Id) of 8 A. It also has a maximum drain-source breakdown voltage (VDS) of 40 V and a maximum gate-source voltage (VGS) of +/- 20 V. This makes it suitable for use in a wide range of applications and ensures that it can safely handle large currents and voltages.
Conclusion
The DMN4800LSSL-13 is a very versatile N-channel MOSFET that can be used in a wide range of applications. Its applications include digital power applications, industrial motor control applications, AC/DC converters, and automotive applications. It is a popular choice for many applications due to its ability to handle high currents, low on-state resistance, and wide operating voltage range. Finally, its working principle is based on applying a voltage to its gate, which creates an electric field that reduces the conductivity of the N-channel, thus controlling the current flow.
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