DMN4060SVT-7 Allicdata Electronics
Allicdata Part #:

DMN4060SVT-7DITR-ND

Manufacturer Part#:

DMN4060SVT-7

Price: $ 0.37
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 45V 4.8A TSOT26
More Detail: N-Channel 45V 4.8A (Ta) 1.2W (Ta) Surface Mount TS...
DataSheet: DMN4060SVT-7 datasheetDMN4060SVT-7 Datasheet/PDF
Quantity: 36000
1 +: $ 0.37000
10 +: $ 0.35890
100 +: $ 0.35150
1000 +: $ 0.34410
10000 +: $ 0.33300
Stock 36000Can Ship Immediately
$ 0.37
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drain to Source Voltage (Vdss): 45V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN4060SVT-7 is a high-voltage, N-Channel DMOS MOSFET (Metal Oxide-Si FET) from Diodes Inc. It is designed to offer high-efficiency voltage conversion applications. It is intended for use in AC/DC switching, DC/DC controllers and regulation, LED lighting control, and single-switch forward converters.

The DMN4060SVT-7 offers many advantages to designers in terms of performance, size and cost. It has a high breakdown voltage of [7V@10mA]. It also offers buy back leakage current of [<1V@105°C]. This makes the device ideal for high-efficiency applications.

The DMN4060SVT-7 has a fast switching speed of [50ns typ]. This allows it to switch fast and with minimal power loss. It has low RDS(on) (drain-to-source on-resistance) of [2.6mΩ@4.5V]. This reduces power dissipation and increases the efficiency of the design. Finally, it has a low threshold voltage of [3V], making it easier to drive from a variety of sources such as low supply voltage microcontroller.

In terms of physical size and cost, the DMN4060SVT-7 offers significant benefits. It is small, coming in an SOT-23 package. This makes it ideal for applications that require a low profile and minimal board space. It is also low cost, making it an attractive option for cost-sensitive designs.

The DMN4060SVT-7 works on the principle of drain-to-source conduction. It uses a MOSFET (Metal Oxide-Si Field Effect Transistor) with an N-channel structure. The transistor has a gate, a source, and a drain. When a voltage is applied to the gate, it creates an electric field that modulates the current flow between the source and the drain. The device is used to switch or amplify a signal or current.

The DMN4060SVT-7 is designed for use in various types of applications. It is well suited for switching, such as AC/DC switching and DC/DC controllers. It can be used to switch high-power signals, controlling currents for LED lighting and other power supplies. It is also ideal for reverse-polarity protection, voltage clamping, and current limiting. It can also be used for single-switch forward converters.

The DMN4060SVT-7 offers many advantages and can be used in a wide variety of applications. With its low RDS(on) and fast switching speed, it is able to deliver high-efficiency performance, while its compact size and low cost make it attractive for cost-sensitive designs. It is therefore an ideal choice for high-voltage, high-efficiency applications.

The specific data is subject to PDF, and the above content is for reference

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