DMN4040SK3-13

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The DMN4040SK3-13 is a dual N-Channel enhancement mode FET (Field Effect Transistor) that is widely used for different applications. It is a single MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that can handle up to 60V of peak drain-source voltage. This FET is well-suited for low-voltage, high-power switching applications, such as in motor control, DC/DC converters, polarity converters, battery protection, and over-current protection. Additionally, the DMN4040SK3-13 can be used in level shifting applications and audio dynamics.

This FET is composed of two independently operating N-channel enhancement mode MOSFETs, each with two sources, two gates, and two drains. Furthermore, they share a single source lead and an isolated common gate. It has a total package size of 18.0mm x 8.7mm with a maximum on-resistance of 0.06Ω and a maximum current rating of 76A. Its maximum RDS(on) is 25mΩ@10V, and its maximum power dissipation is 320W.

The working principle of the DMN4040SK3-13 involves the use of an insulated gate that creates an electrical field to control the flow of current. When an electric field is applied to the gate, it changes the conductivity of the channel between the source and drain of the FET. Thus, more current can be passed through the channel when the gate voltage is above a certain threshold. This property is known as enhancement-mode. By altering the gate voltage, the flow of current through the channel can be modulated, enabling the DMN4040SK3-13 to be used in a variety of applications, from power switching to audio dynamics.

The DMN4040SK3-13 is designed to operate in a repetitive state with a pulse width ratio of up to 1:200. It also features a low gate charge and fast switching times, making it suitable for use in high-frequency applications. Additionally, it has superior immunity against thermal runaway, making it a great choice for use in applications where heat dissipation needs to be kept to a minimum.

The DMN4040SK3-13 is highly reliable and has a long service life. It features an optimized layout, low on-resistance, and low gate charge that make it well-suited for a wide range of applications. It is suitable for low-to-high power switching applications, level shifting, audio dynamics, and more. Additionally, its circuitry has been optimized for fast switching and high-frequency applications, enabling it to provide superior reliability and longer service life.

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