DMN4034SSD-13 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DMN4034SSD-13 is a type of application field transistor and part of the discrete semiconductor devices family. As part of the FETs, MOSFETs, and arrays category, the DMN4034SSD-13 is a dynamic logic N-channel MOSFET that enables fast switching speeds with very low on-resistance superior to many of its alternatives. An application field transistor is a type of transistor used to form logic gates and is an important part of both digital circuits and analog circuits. The DMN4034SSD-13 is an ideal choice for high-speed switching and low-voltage switching applications.

The DMN4034SSD-13 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor), which means it is a type of voltage-controlled device. It operates on the principle of capacitive coupling, where electrons are transferred between the source and the drain. The transistor can amplify or switch electronic signals and is used mostly in digital circuits. The DMN4034SSD-13 has an on state resistance of 25 milliohms, meaning it can handle a relatively small amount of current. It also has a small voltage drop, which makes it an ideal choice for low power applications.

The DMN4034SSD-13 is a compact package type with an extremely low on-resistance. It is packaged in a 4-lead SMD package and is available in an exposed pad version for applications with higher temperatures or higher power. The device is also connected to an EMI/ESD-protected device, making it more resilient to electrical noise. It is designed for quick and reliable performance in high power applications and is used in a variety of different applications, such as in signal processing applications, automotive applications, commercial audio, and communication equipment.

The working principle of the DMN4034SSD-13 is regulated by a number of factors, such as the type and thickness of the gate oxide, the type of semiconductor material used, and the gate voltage. It is designed to operate with a relatively small gate voltage and a relatively large drain-source voltage. The gate oxide is responsible for controlling the on-state resistance, which is where the electrons flow from the source to the drain. The thickness of the oxide will determine how much current can flow through the device. The thickness of the oxide must be kept constant to ensure proper operation of the device.

The DMN4034SSD-13 is an ideal choice for designers who need to keep their operations efficient and fast. Its low gate voltage and low on-state resistance enable it to operate quickly and efficiently in high power applications. It is a highly reliable device and is suitable for a variety of applications that make use of fast switching and low power. With its excellent electrical properties and versatile applications, the DMN4034SSD-13 is an ideal choice for many advanced designs.

The specific data is subject to PDF, and the above content is for reference