
Allicdata Part #: | DMN4800LSSQ-13DITR-ND |
Manufacturer Part#: |
DMN4800LSSQ-13 |
Price: | $ 0.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 8.6A 8-SO |
More Detail: | N-Channel 30V 8.6A (Ta) 1.46W (Ta) Surface Mount 8... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.12914 |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.46W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 798pF @ 10V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 8.7nC @ 5V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.6A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMN4800LSSQ-13 is one of the more commonly used devices in the field of transistors, particularly FETs and MOSFETs. A single unit, it is designed to meet the specifications of high-frequency applications. In this article, we will take a look at the application field and working principle of the DMN4800LSSQ-13.
Application
The DMN4800LSSQ-13 is a single-channel device, making it suitable for multiple applications. It is commonly used in power amplifiers, as an input buffer, in RF switches, and for audio control.
It is also suitable for applications requiring high precision, such as automatic gain control, phase lock loops, and communication systems. In addition, due to its low Leakage current and low gate capacity, the device is ideal for timing circuits, logic circuits, delay circuits, and other precision applications.
Due to its large input and output signals, the DMN4800LSSQ-13 is also ideal for high-power applications such as motor control and power supplies. Its small size enables it to be used in high-density circuits as well.
Working Principle
The DMN4800LSSQ-13 is a depletion-mode MOSFET. This means that it is normally on and the channel is open, with no voltage applied to the gate terminal. When a positive voltage is applied to the gate, it creates an inversion layer. This layer effectively depletes the current, turning the device off. When the gate voltage is returned to zero, the inversion layer disappears, allowing current to flow again.
The DMN4800LSSQ-13 also features a very low on-resistance. This means that when the device is turned on, it has a very low resistance, allowing current to flow efficiently with minimal power loss. The low resistance also helps to reduce noise, which is important in many applications.
The DMN4800LSSQ-13 has a high threshold voltage as well. This means that it will require a relatively high voltage to turn it on. This characteristic is important in some applications, such as when the device is used in an audio control circuit, as it prevents the device from turning on due to noise or random signals.
Conclusion
The DMN4800LSSQ-13 is a versatile, high-performance transistor suitable for a wide variety of applications. Due to its small size and low power consumption, it is ideal for high-density circuits, as well as power amplifiers and audio control. Its low on-resistance and high threshold voltage ensure that it operates efficiently and reliably, with minimal power loss and noise.
The specific data is subject to PDF, and the above content is for reference
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