DMN4036LK3Q-13

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The DMN4036LK3Q-13 is a high-side, N-channel MOSFET which features a low gate threshold voltage and a low on-resistance. This device is an ideal solution for power switching applications. It is tolerant to negative supply transients, as well as reverse bias gate and drain loading. With a blocking voltage of 40 V and an on-resistance of 130 mΩ, this device is ideal for a variety of applications such as consumer appliances, industrial controllers, automotive applications, and portable devices.

The DMN4036LK3Q-13 is a part of a family of MOSFET transistors offering various performance characteristics and form factors. It is a single chip with four terminals; the source, gate, drain and body, arranged in an N-channel MOSFET configuration as shown in the below figure.

A MOSFET is a type of transistor which exploits an electric field to control the flow of electric current. It consists of a thin layer of gate oxide material, typically silicon dioxide, sandwiched between a gate and the source and drain regions. The gate oxide material acts as an insulator, preventing current from flowing from the gate to the source and drain regions. A voltage applied to the gate electrode creates an electric field which in turn modulates the conductivity of the gate oxide material, allowing for current to flow from the source region to the drain region.

MOSFETs are typically used in power switching applications due to their high-speed operation and their ability to handle high voltages. The DMN4036LK3Q-13 in particular is configured as a high-side switch, meaning that current flows from the drain to the source when the required gate voltage is applied. This device is also tolerant to negative supply transients, making it ideal for use in a variety of applications requiring a high-speed switching element.

In addition to its high-side configuration, the DMN4036LK3Q-13 is also able to handle reverse bias gate and drain loading, meaning that it can be applied in applications which require a power back-up system. The blocking voltage of 40 V ensures that the device will survive in applications requiring a higher supply voltage, while its on-resistance of 130 mΩ ensures a low conduction loss which results in higher efficiency and greater power.

In summary, the DMN4036LK3Q-13 is a high-side, N-channel MOSFET transistor with a low gate threshold voltage and a low on-resistance. It is ideal for a variety of applications such as consumer appliances, industrial controllers, automotive applications and portable devices requiring fast and reliable power switching. The device is also tolerant to negative supply transients and can handle reverse bias gate and drain loading, making it suitable for use in applications requiring a back-up power system. With its high blocking voltage, low on-resistance and fast switching speed, the DMN4036LK3Q-13 is a highly versatile and reliable device for a variety of applications.

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