Allicdata Part #: | DMN4800LSSDITR-ND |
Manufacturer Part#: |
DMN4800LSS-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 9A 8SOP |
More Detail: | N-Channel 30V 9A (Ta) 1.46W (Ta) Surface Mount 8-S... |
DataSheet: | DMN4800LSS-13 Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.46W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 798pF @ 10V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 9.47nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A DMN4800LSS-13 field effect transistor is a device that enables a current to pass through a controlled channel. It is usually operated by controlling the drain-source voltage, which will control the current that can flow through the channel. In this section, we will discuss the application field and working principle of DMN4800LSS-13 field effect transistors.
Application Field of DMN4800LSS-13
The DMN4800LSS-13 is a high-performance field effect transistor used in a wide range of applications including power electronics, high voltage switching devices, communications, instrumentation, and industrial controls. It is a robust, cost-effective device that can be used for power switching, motor control, and relay control. This device is particularly useful for applications that require high voltage or large capacitive loads. It has an excellent high-temperature stability and can operate at up to 200°C.
Another advantage of the DMN4800LSS-13 is its low on-state resistance, which makes it suitable for applications that require low-power consumption. It also has a low gate-threshold voltage, making it suitable for low-voltage applications such as battery-powered devices. The device also offers high switching speeds and low input capacitance, making it suitable for applications where both speed and accuracy is needed.
The DMN4800LSS-13 can be used in a variety of applications, including power supplies, DC-DC converters, audio amplifiers, digital circuits, and motor control. It is also suitable for use in automotive, aerospace, and medical applications due to its temperature stability and robust performance.
Working Principle of DMN4800LSS-13
The basic operation of a field effect transistor (FET) is based on a phenomenon known as gate-source/ gate-drain capacitance. This effect is analogous to the capacitance between two conductive plates separated by a dielectric material.
When a voltage is applied to the gate-source or gate-drain of a FET, the gate-source/ gate-drain capacitance is increased. This in turn causes the resistance between the source and drain to be reduced, allowing a current to flow through the device. The magnitude of this current is determined by the current gain, which is typically in the range of several hundred.
The DMN4800LSS-13 is a N-channel FET, meaning it is designed as a single unit of multiple drain-source/gate-drain capacitances that allow for a rapid switching of the current on and off. The device can be used as an amplifier, allowing a small input signal to be amplified to a larger output signal. It is also a good candidate for use in high-voltage switching applications where a small voltage change can have a large effect on an output signal.
In general, the DMN4800LSS-13 can be used in a wide variety of applications due to its high-performance and low on-state resistance. It can also be used for power switching, motor control, and relay control due to its high-temperature stability and robust performance. It is a cost-effective device that can be used in applications that require low power consumption, low-voltage operation, and high speed operation.
The specific data is subject to PDF, and the above content is for reference
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