DMN4015LK3-13

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The DMN4015LK3-13 is a single N-channel enhancement type Field Effect Transistor (FET) and is designed for high-speed switching applications. It is a 40V, 0.13 Ohm, N-Channel MOSFET that can handle power up to 28A with a Maximum Drain Source Resistance of only 0.13 ohms. This MOSFET is suitable for applications such as DC-DC converter driving, synchronous rectification, and load switch applications.

Introduction

The DMN4015LK3-13 is a high-speed switching, N-channel enhancement-mode MOSFET. It is a voltage-controlled semiconductor device which is used to switch and amplify signals in a wide range of applications. This MOSFET requires only a small gate voltage of 5V to switch on andoff and its gate is insulated from main current path by a thin layer of gate oxide. As a result, the DMN4015LK3-13 only needs a low gate current to operate and can provide fast switching speeds and reduced power consumption.

Applications

The DMN4015LK3-13 can be used in many different applications due to its wide variety of features. The most common applications for this MOSFET include DC-DC converter driving, synchronous rectification, and load switch applications. This MOSFET is ideal for these applications because of its low on resistance, its low gate charge and its high drain current handling capabilities. This device is also suitable for many automotive applications, such as power windows, sunroofs, and traction control systems.

The DMN4015LK3-13 is also useful in motor control applications, such as motor speed control, motor current detection, motor sequence control, and position control. The low on-resistance of the MOSFET results in less power loss and significantly increased device lifetime. This MOSFET can also be used in low voltage ICs, such as Power Management Integrated Circuits (PMICs), Voltage Regulators, and Automotive Integrated Circuits.

Working Principle

In the DMN4015LK3-13, there are two p-type source and drain regions and one n-type channel region between them. When the gate voltage is applied, the negatively-charged electrons in the n-type channel are repelled and drift towards the positive gate. This forms an inversion layer in the n-type channel and consequently creates a low resistance current path between the source and the drain. In this mode of operation, the MOSFET is said to be in the “on-state”. When the gate voltage is removed or reduced, the inversion layer disappears, resulting in a “shorter” Drain-Source resistance and thus the transistor is said to be in “off-state”.

The DMN4015LK3-13 has an excellent RDS(ON) rating, meaning that it can switch on and off at extremely high speeds. This, in turn, also results in a high slew rate and reduced total power consumption. Additionally, the MOSFET has an excellent immunity to Electro-Static Discharge (ESD). This is due to the very thin gate oxide layer which helps disperse any static electricity that may come in contact with the gate.

Conclusion

The DMN4015LK3-13 is a high-speed switching, N-channel enhancement-mode MOSFET. It is suitable for a wide array of applications, such as DC-DC converter driving, synchronous rectification, load switch applications, as well as motor control and low voltage ICs. The low on-resistance, low gate charge, high drain current handling capability and excellent immunity to ESD make the DMN4015LK3-13 the ideal choice for these applications.

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