| Allicdata Part #: | DMN4030LK3-13DITR-ND |
| Manufacturer Part#: |
DMN4030LK3-13 |
| Price: | $ 0.20 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 40V 9.4A DPAK |
| More Detail: | N-Channel 40V 9.4A (Ta) 2.14W (Ta) Surface Mount T... |
| DataSheet: | DMN4030LK3-13 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.20000 |
| 10 +: | $ 0.19400 |
| 100 +: | $ 0.19000 |
| 1000 +: | $ 0.18600 |
| 10000 +: | $ 0.18000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.14W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 604pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 12.9nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 12A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9.4A (Ta) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The DMN4030LK3-13 is a single N-ChannelEnhancement Mode Field Effect Transistor (FET). This powerful switching device contains an N-Channel MOSFET which handles currents up to 40A. It is offered in a press-fit package, helping to provide a reliable and cost-effective system solution.
The DMN4030LK3-13 offers satisfactory performance for a variety of applications in the automotive industry, including primary and secondary switching, as well as in a wide range of industrial applications. It has a low internal capacitance which helps to provide better signal switching quality. The device is designed to provide long-lasting and reliable operation even in harsh application environments.
Most FETs operate using the principles of MOSFETs, or Metal Oxide Semiconductor Field Effect Transistors. This type of transistor uses an insulated gate which enables electrostatic control over the output current of the device. The working principle behind MOSFETs relies on the fact that the voltage found at the gate can be used to vary the current being allowed to pass through the device. MOSFETs are notable for their low on-resistance values and are often more efficient than bipolar transistors. The main feature of the DMN4030LK3-13 is its low on-resistance which helps ensure reliable operation in both low and high power applications.
The DMN4030LK3-13 is ideal for a variety of engine control, automotive and automotive related applications. It offers a low switching time, low power consumption, and low noise characteristics. In addition, it is well-suited for use in a wide range of automotive applications, including fuel injection systems, HVAC systems, and exhaust gas recirculation systems, among others. Furthermore, the DMN4030LK3-13 can be used in a variety of industrial applications, such as printed circuit boards and motor controllers, as well as in battery management applications.
The DMN4030LK3-13 is a versatile and reliable FET solution for a wide range of industrial and automotive related applications. Its low on-resistance, coupled with its press-fit package, combine to offer a cost-effective and reliable system solution. Its low on-resistance, in particular, helps to provide longer-lasting and reliable operation, even when operating in harsh application environments. In conclusion, the DMN4030LK3-13 is an ideal solution for those looking for a dependable, yet cost-effective solution for their industrial and automotive related applications.
The specific data is subject to PDF, and the above content is for reference
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DMN4030LK3-13 Datasheet/PDF