DMN4027SSD-13 Allicdata Electronics
Allicdata Part #:

DMN4027SSD-13TR-ND

Manufacturer Part#:

DMN4027SSD-13

Price: $ 0.26
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 40V 5.4A 8SO
More Detail: Mosfet Array 2 N-Channel (Dual) 40V 5.4A 1.8W Surf...
DataSheet: DMN4027SSD-13 datasheetDMN4027SSD-13 Datasheet/PDF
Quantity: 10000
1 +: $ 0.26000
10 +: $ 0.25220
100 +: $ 0.24700
1000 +: $ 0.24180
10000 +: $ 0.23400
Stock 10000Can Ship Immediately
$ 0.26
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: DMN4027SSD
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.8W
Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 27 mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN4027SSD-13 is a Dual N-Channel Field Effect Transistor (FET), designed with a lowgate resistance for use as a single device in various circuit applications.

The DMN4027SSD-13 is classified among the array of FETs which are the most widely applied active components in the electronics industry. It is configured with two N-Channel transistors connected in a complementary arrangement. The two transistors essentially form a single device, with a common gate electrodes connecting to the gate of each transistor. This configuration is advantageous as it provides better performance than other single transistors, as well as a reduction in power consumption.

The main application of the DMN4027SSD-13 is as a switch, which shall open and close the electrical circuit in an instant, switching the current on and off. When the gate voltage is set to a high value, the transistor is activated and the current flows through, and when the gate voltage is set to a low value, the transistor is deactivated and the current does not flow. This is a much faster and more efficient switching option than mechanical switches, as the voltage and current response is instant. This application makes the DMN4027SSD-13 suitable for a wide range of applications such as radio frequency (RF) circuits in wireless communication systems, logic gates in digital circuits, and voltage and current regulators.

The DMN4027SSD-13 is a three-terminal FET device with a separate source, gate, and drain. The drain is connected to the current flow terminal and when a voltage is applied to the gate electrode, the device is electrically turned-on and the flow of current is permitted to partially flow out of the drain terminal. The DMN4027SSD-13 is unique in that the resistance between the gate and the source terminals is lower than other field-effect transistors, providing better performance at low power levels. The DMN4027SSD-13 has superior temperature and electrical characteristics, thus making it suitable for use in a wide range of high-temperature and other extreme environmental conditions.

The DMN4027SSD-13 is ideal for use in power amplifiers, switching devices, and voltage amplifiers, as it provides superior electrical performance at a low cost. Additionally, it is capable of high-speed switching and is suitable for use in a wide range of high-frequency applications. The DMN4027SSD-13 is also useful in logic-level digital circuits and a variety of other applications that require reliable, high-performance switching action.

In summary, the DMN4027SSD-13 offers an array of advantages such as low gate resistance, robust construction, superior electrical performance, and high-speed switching. These benefits make it the ideal choice for use in various application fields. Additionally, its low cost and energy efficiency makes it a cost effective option for anyone looking for a reliable solution for their application needs.

The specific data is subject to PDF, and the above content is for reference

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