
Allicdata Part #: | DMN4027SSD-13TR-ND |
Manufacturer Part#: |
DMN4027SSD-13 |
Price: | $ 0.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 40V 5.4A 8SO |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 5.4A 1.8W Surf... |
DataSheet: | ![]() |
Quantity: | 10000 |
1 +: | $ 0.26000 |
10 +: | $ 0.25220 |
100 +: | $ 0.24700 |
1000 +: | $ 0.24180 |
10000 +: | $ 0.23400 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | DMN4027SSD |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.8W |
Input Capacitance (Ciss) (Max) @ Vds: | 604pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs: | 12.9nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 7A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A |
Drain to Source Voltage (Vdss): | 40V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMN4027SSD-13 is a Dual N-Channel Field Effect Transistor (FET), designed with a lowgate resistance for use as a single device in various circuit applications.
The DMN4027SSD-13 is classified among the array of FETs which are the most widely applied active components in the electronics industry. It is configured with two N-Channel transistors connected in a complementary arrangement. The two transistors essentially form a single device, with a common gate electrodes connecting to the gate of each transistor. This configuration is advantageous as it provides better performance than other single transistors, as well as a reduction in power consumption.
The main application of the DMN4027SSD-13 is as a switch, which shall open and close the electrical circuit in an instant, switching the current on and off. When the gate voltage is set to a high value, the transistor is activated and the current flows through, and when the gate voltage is set to a low value, the transistor is deactivated and the current does not flow. This is a much faster and more efficient switching option than mechanical switches, as the voltage and current response is instant. This application makes the DMN4027SSD-13 suitable for a wide range of applications such as radio frequency (RF) circuits in wireless communication systems, logic gates in digital circuits, and voltage and current regulators.
The DMN4027SSD-13 is a three-terminal FET device with a separate source, gate, and drain. The drain is connected to the current flow terminal and when a voltage is applied to the gate electrode, the device is electrically turned-on and the flow of current is permitted to partially flow out of the drain terminal. The DMN4027SSD-13 is unique in that the resistance between the gate and the source terminals is lower than other field-effect transistors, providing better performance at low power levels. The DMN4027SSD-13 has superior temperature and electrical characteristics, thus making it suitable for use in a wide range of high-temperature and other extreme environmental conditions.
The DMN4027SSD-13 is ideal for use in power amplifiers, switching devices, and voltage amplifiers, as it provides superior electrical performance at a low cost. Additionally, it is capable of high-speed switching and is suitable for use in a wide range of high-frequency applications. The DMN4027SSD-13 is also useful in logic-level digital circuits and a variety of other applications that require reliable, high-performance switching action.
In summary, the DMN4027SSD-13 offers an array of advantages such as low gate resistance, robust construction, superior electrical performance, and high-speed switching. These benefits make it the ideal choice for use in various application fields. Additionally, its low cost and energy efficiency makes it a cost effective option for anyone looking for a reliable solution for their application needs.
The specific data is subject to PDF, and the above content is for reference
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