DMNH6021SPDQ-13 Discrete Semiconductor Products |
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Allicdata Part #: | DMNH6021SPDQ-13DITR-ND |
Manufacturer Part#: |
DMNH6021SPDQ-13 |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2NCH 60V 8.2A POWERDI |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 8.2A, 32A 1.5W... |
DataSheet: | DMNH6021SPDQ-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.31443 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 8.2A, 32A |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20.1nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1143pF @ 25V |
Power - Max: | 1.5W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerDI5060-8 |
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.DMNH6021SPDQ-13 Application Field and Working Principle
DMNH6021SPDQ-13 is a type of parallel gate array system with field-effect transistors (FETs). It belongs to a larger family of semiconductor devices known as Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs). This device has a relatively simple structure and is mainly used for the purpose of switching and amplifying signals. It works by controlling the flow of current between two terminals by the application of an external electric field, making it a powerful and efficient option for use in modern electronic devices.
Structure of the DMNH6021SPDQ-13
The DMNH6021SPDQ-13 is composed of a number of FETs arranged in parallel to form an array. These FETs function as switching and amplifying elements, allowing the device to be used for a variety of applications. The device is constructed with a metal oxide semiconductor as the insulator and the substrate as the active layer, while an applied electric field affects the flow of current between the source (S) and the drain (D) terminals. The gate (G) terminal is connected to the metal oxide layer and provides the means for controlling the flow of current between the source and drain.
Working Principle of the DMNH6021SPDQ-13
The working principle of the DMNH6021SPDQ-13 is based on the well-known principle of the field-effect transistor (FET). The device works by controlling the flow of current between the source and drain terminals by application of an external electric field. This electric field can be generated by applying a gate voltage to the gate terminal. The gate voltage is used to change the electric field between the source and the drain, allowing the device to operate either as an amplifier or as a switch. In both cases, the source-drain current is changed depending on the gate voltage.
When the gate voltage is low, the electric field between the source and the drain is reduced, causing the current between them to drop. This allows the device to function as a switch and opens the circuit, allowing no current to pass through. On the other hand, when the gate voltage is increased, the electric field grows, allowing more current to pass through. This allows the device to operate as an amplifier and allows the signal to be amplified.
Applications of the DMNH6021SPDQ-13
The DMNH6021SPDQ-13 is used in a wide range of applications, from high-speed data processing to low-power circuits. It is widely used for signal amplification and switching in modern electronic devices, such as cellular phones, PDAs, MP3 players, and digital video recorders. The device can also be used in computers, digital cameras, and other digital devices.
The DMNH6021SPDQ-13 is also widely used in automotive electronics applications. It is used to control the electric power supply to the engine and is often used in high-end automotive audio systems and other automotive applications. In addition, the device can be used in medical devices, such as magnetic resonance imaging (MRI) scanners, and in digital recording and playback devices.
Advantages of Using the DMNH6021SPDQ-13
The DMNH6021SPDQ-13 offers several advantages over other types of FETs. It is small, lightweight, and highly efficient, making it easy to integrate into modern electronic devices. In addition, its small size and low power consumption means that it requires less power to operate. This makes it an ideal choice for use in small, portable electronics. Finally, the device has a high switching speed, meaning that it can quickly adjust to changes in the external electric field.
The specific data is subject to PDF, and the above content is for reference
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