DMNH6042SPDQ-13

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PowerDI5060-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1.2W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	584pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	8.8nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	50 mOhm @ 5.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	5.7A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to DMNH6042SPDQ-13

DMNH6042SPDQ-13 is a type of single N-channel insulated-gate field-effect transistor (IGFET). IGFETs are a type of transistor typically used for switching and amplifying electronic signals, and can be found in a broad range of applications from analog amplification to digital switching. DMNH6042SPDQ-13 is typically used in power management circuits, such as used in microprocessors, automotive applications, and so on.

IGFET Working Principle

A field-effect transistor is an electrical device that uses an electric field to control the current flow. The device has two electrodes called the source and drain, and a third electrode called the gate. The resistance between the source and drain is controlled by the voltage applied to the gate.An IGFET works by allowing electric current to flow between two electrodes when the voltage applied to the gate is greater than a certain threshold level. When the voltage on the gate is below the threshold level, current does not flow between the source and drain. By varying the gate voltage, the current flow between the source and drain can be controlled.

DMNH6042SPDQ-13 Application Fields and Benefits

The DMNH6042SPDQ-13 is a Power MOSFET, which means it is optimized for high power operation.The DMNH6042SPDQ-13 can be used in a wide range of power electronic applications, including motor control, low voltage converters, high current switching, and industrial motor drives.The DMNH6042SPDQ-13 offers several key benefits compared to other types of transistors. It has a very high switching speed and can handle very high currents. Its lower RDS(on) and gate charge compared to standard MOSFETs make it more efficient, allowing it to handle a higher power rating than other transistors of similar size. Furthermore, the device’s low gate threshold makes it suitable for use with low voltage applications, such as powering LEDs.

Conclusion

In conclusion, the DMNH6042SPDQ-13 is a single N-channel insulated-gate field-effect transistor, optimized for use in high power application. It is capable of high switching speeds and is ideal for powering very high current loads. The DMNH6042SPDQ-13 is a highly versatile transistor with a range of uses, from motor control to low voltage converter applications.

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