DMNH6008SPSQ-13 Allicdata Electronics

DMNH6008SPSQ-13 Discrete Semiconductor Products

Allicdata Part #:

DMNH6008SPSQ-13DITR-ND

Manufacturer Part#:

DMNH6008SPSQ-13

Price: $ 0.54
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET NCH 60V 16.5A POWERDI
More Detail: N-Channel 60V 16.5A (Ta), 88A (Tc) 1.6W (Ta) Surfa...
DataSheet: DMNH6008SPSQ-13 datasheetDMNH6008SPSQ-13 Datasheet/PDF
Quantity: 2500
2500 +: $ 0.48904
Stock 2500Can Ship Immediately
$ 0.54
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2597pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40.1nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 88A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMNH6008SPSQ-13 is a commonly used field-effect transistor, designed for switching and amplification circuits in a wide range of applications. The device is a single-channel N-channel enhancement-mode enhancement-mode MOSFET.

The DMNH6008SPSQ-13 is designed for a wide range of applications, including switching and signal amplification in power supplies, motor control, motion control, and data communication signal conditioning.

The device has a neat and slim design, making it easier and more efficient to use in applications such as power supply boards. It also offers a high performance and low power consumption, making it suitable for use in compact and portable system designs.

The DMNH6008SPSQ-13 is a normally off device, meaning it requires a gate voltage to switch it on fully. The gate voltage is controlled by applying a voltage to either the gate or the source, depending on the mode of operation.

In enhancement mode, the gate voltage must be higher than the source voltage for the device to switch on. The device is designed so that the drain and source fields are concentrated onto the channel, allowing for a higher concentration of current flow.

In depletion mode, the gate voltage must be lower than the source voltage for the device to switch on, while the concentration of current flow decreases as the gate voltage approaches zero. This mode of operation is typically used for applications such as protection circuits.

The DMNH6008SPSQ-13 also offers a low on-resistance, which means that when it is switched on, the current flowing through it is higher than the current flowing through a conventional MOSFET. This allows for higher switching speeds and improved efficiency.

The DMNH6008SPSQ-13 has a breakdown voltage of 60V, allowing it to be used in a wide range of applications and providing ample protection for any component it is connected to. It is also capable of withstanding up to 8 A continuous drain current, making it suitable for use in systems with high power requirements.

The DMNH6008SPSQ-13 is also equipped with a number of protection features such as a thermal shutdown and overcurrent protection, ensuring that it remains safe and reliable. It is also RoHS compliant and lead-free, making it suitable for use in environmentally friendly applications.

Overall, the DMNH6008SPSQ-13 is an ideal choice for many applications due to its small size and high performance. Its wide range of features and protection makes it reliable and safe, while its low power consumption and high current capacity makes it suitable for use in a wide range of systems.

The specific data is subject to PDF, and the above content is for reference

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