DMNH4005SPSQ-13

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The DMNH4005SPSQ-13 is a single N-channel enhancement logic level MOSFET (metal-oxide-semiconductor field-effect transistor) that can help with a variety of applications that require using higher voltages in a very small package. This specific MOSFET may be more suitable for higher temperature and higher voltage applications compared to its other families, making it a desirable choice for those who require a discrete component solution to their design. In this article, we will discuss the various applications of the DMNH4005SPSQ-13, along with its working principle and key features.

Application Field

The DMNH4005SPSQ-13 has a wide variety of applications where it can be used. It can be used in DC-DC converters, automotive relay drivers, motor/motion controllers, darlington power transistors, high-side switches, interface logic and protection circuits, power management, and other DC-DC applications. This MOSFET is also suitable for use in low-to-medium-voltage switching circuits such as appliances and other consumer electronic products, as well as in medical equipment and power supplies. Players of portable electronics (portable CD players, notebook PCs, and cell phones) also benefit from using this MOSFET in their designs since it offers a low on-state resistance of 0.15 Ohms and high-speed switching performance.

The DMNH4005SPSQ-13 is also useful in automotive electronics, where the robustness of the technology can help make a difference. This MOSFET can be used in the powertrain, body control and audio systems, and safety systems; additionally, some of its derivations can be used in motor control, power line communications, and wireless data transmitters/receivers.

Working Principle

At the heart of the MOSFET/FET (field-effect transistor) technology is the use of a gate terminal to control the current flow through it. In the DMNH4005SPSQ-13, the gate terminal is controlled by an applied voltage, and depending on the specific design of the device, a higher gate voltage can result in a higher source-drain current flow. The source-drain current flow is limited by the on resistance of the silicon substrate that makes up the MOSFET circuit. On the DMNH4005SPSQ-13, the resistance is 0.15 Ohms.

The working of the DMNH4005SPSQ-13 is quite simple. When a voltage is applied to the gate terminal, the current starts to flow from the source to the drain, as dictated by the applied voltage. This means that different drain voltages can be achieved with different gate voltages, allowing for some amount of voltage regulation. Additionally, the MOSFET can be used as a switch, with the gate voltage controlling it being used to turn the current on and off.

Key Features

The DMNH4005SPSQ-13 has several key features that make it suitable for various applications. It has a maximum rated voltage (BVDSS) of 500V, a maximum source-drain current of 3A, and a maximum power dissipation (1W) at 25°C. The on-state resistance of the MOSFET is 0.15 Ohms, and its maximum drain-source on-state voltage is 1.0V. The DMNH4005SPSQ-13 also has an enhanced logic level threshold, with a 3.3V logic threshold and 4.5V gate drive (VGS) . It also features an exceptional avalanche capability. This means that it is able to handle large voltage surges with relative ease, making it suitable for use in applications where it needs to be able to withstand high transient currents.

The DMNH4005SPSQ-13 also offers an extended temperature range from -55°C to 150°C, meaning that it can be used in a wide variety of temperature environments. Additionally, it is RoHS compliant, meaning that it is suitable for use in designs where it needs to meet certain environmental regulations.

Conclusion

The DMNH4005SPSQ-13 is a single N-channel enhancement logic level MOSFET that can be used in a variety of applications where higher voltages are required and a discrete component solution is needed. Its features make it suitable for use in a range of applications, from DC-DC converters and motor control applications to automotive relay drivers and power management. Its low on-state resistance, extended temperature range, and enhanced logic threshold level make it a reliable and desirable choice for those looking for a discrete component solution to their designs.

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