
DMNH6042SSDQ-13 Discrete Semiconductor Products |
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Allicdata Part #: | DMNH6042SSDQ-13DITR-ND |
Manufacturer Part#: |
DMNH6042SSDQ-13 |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2 N-CH 60V 16.7A 8SO |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 16.7A (Tc) 2.1... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.28066 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 16.7A (Tc) |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 5.1A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 584pF @ 25V |
Power - Max: | 2.1W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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DMNH6042SSDQ-13 Application Field And Working Principle
DMNH6042SSDQ-13 is a type of MOSFET. MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. It is widely used as a type of field effect transistor (FET), because of its many advantageous features and good electrical properties. In this article, we are going to discuss the application fields and working principle of DMNH6042SSDQ-13.
DMNH6042SSDQ-13 is part of a family of FETs called high power MOSFETs. This particular type of MOSFET is particularly useful for applications that need high bandwidth, low power consumption, and high DC and AC characteristics. Due to these advantages, DMNH6042SSDQ-13 is widely applied in industrial, automotive, and consumer electronics circuits. Some areas where these FETs are commonly used include: power converters, high-speed switching, radio-frequency amplifiers, and power supplies.
The working principle of a DMNH6042SSDQ-13 is largely based on its structure. It consists of three terminals - the source (S), the gate (G), and the drain (D). The source and drain are two heavily doped semiconductor regions, while the gate is an insulated gate region. When a potential difference is applied across the gate, a field effect is created, resulting in an inversion of the semiconductor regions and the mobility of electrons in the channel. The drain current depends on the potential difference applied to the gate and the width of the channel.
Due to the enhanced mobility of electrons through its narrow channels, DMNH6042SSDQ-13 can be used as an ideal power switch in many different applications. It is also well-suited for high speed switching capacity, with faster switching times than comparable Bulk MOSFETs. This makes them suitable for applications such as radio transmitters, frequency synthesizers, and DC to DC converters.
In addition, DMNH6042SSDQ-13 are part of a family of MOSFETs called arrays. Arrays offer several advantages when compared to other types of FETs. For one, they have excellent switching characteristics due to their low input capacitance and high isolation properties. This makes them particularly suited for high speed switching applications. They also offer superior temperature stability and higher reliability than other types of FETs.
Furthermore, DMNH6042SSDQ-13 is also well-suited for applications that require low levels of capacitance and noise. This is due to the fact that they have lower input and output capacitances than other type of FETs. This makes them ideal for use in high frequency oscillators and filters.
Overall, DMNH6042SSDQ-13 are excellent transistors that can be used in a variety of applications. Due to their excellent electrical properties and enhanced mobility, they are ideal for applications requiring high speed switching, low capacitance, and superior temperature stability. Arrays of DMNH6042SSDQ-13 are particularly useful for applications that require a large number of transistors to be connected together for fast and reliable operation.
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DMNH10H028SK3-13 | Diodes Incor... | 0.44 $ | 1000 | MOSFET N-CH 100V 55A TO25... |
DMNH4005SPSQ-13 | Diodes Incor... | 0.35 $ | 1000 | MOSFET N-CH 40V 80A POWER... |
DMNH4026SSDQ-13 | Diodes Incor... | 0.25 $ | 1000 | MOSFET 2 N-CHANNEL 7.5A 8... |
DMNH6021SPS-13 | Diodes Incor... | 0.21 $ | 1000 | MOSFET NCH 60V 55A POWERD... |
DMNH10H028SPSQ-13 | Diodes Incor... | 0.67 $ | 1000 | MOSFET N-CH 100V 40A POWE... |
DMNH6042SPD-13 | Diodes Incor... | 0.26 $ | 1000 | MOSFET NCH 60V 25A TO252N... |
DMNH6022SSD-13 | Diodes Incor... | 0.28 $ | 1000 | MOSFET 2NCH 60V 7.1A 8SOM... |
DMNH6012LK3-13 | Diodes Incor... | 0.37 $ | 1000 | MOSFET NCH 60V 60A TO252N... |
DMNH6008SCTQ | Diodes Incor... | 1.48 $ | 78 | MOSFET NCH 60V 130A TO220... |
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DMNH6008SCT | Diodes Incor... | 1.01 $ | 1000 | MOSFET NCH 60V 130A TO220... |
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DMNH4006SK3-13 | Diodes Incor... | 0.67 $ | 1000 | MOSFET N-CH 40V 18A TO252... |
DMNH6008SPS-13 | Diodes Incor... | 0.5 $ | 1000 | MOSFET N-CH 60V 16.5A POW... |
DMNH6042SSDQ-13 | Diodes Incor... | 0.32 $ | 1000 | MOSFET 2 N-CH 60V 16.7A 8... |
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