DMNH4026SSDQ-13

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The DMNH4026SSDQ-13 is an N-channel array of MOSFETs with 20 channels. It is part of a family of devices commonly referred to as arrays of insulated-gate field effect transistors, or IGFETs. This type of device is useful for a wide range of applications due to its low-output on-state resistance, high-frequency response, and relatively low power requirements. The DMNH4026SSDQ-13 is specifically designed for use in a variety of high-precision industrial and consumer applications such as motion control and switching power supplies.

The on-state resistance of the DMNH4026SSDQ-13 is defined as the resistance between the source and drain terminals when the MOSFET is switched on. This is an important parameter for properly sizing the circuit for the application. The on-state resistance of the DMNH4026SSDQ-13 is typically in the range of 0.45-1.2 Ohms, providing a good balance between low power and high frequency response. The DMNH4026SSDQ-13 has a threshold voltage of 2.3 V which makes it capable of handling voltages up to 10V.

The working principle of the DMNH4026SSDQ-13 is simply that of an array of insulated-gate FETs (IGFETs). An insulated gate is a layer of electrically insulating material, such as silicon dioxide, which is formed over a metal gate in order to create an electrically isolated region. This allows for the electrical control of an IGFET\'s drain-source current by controlling the voltage between the gate and the source terminals. When a voltage is applied to the gate of an IGFET, the insulating layer at the gate region is breached and the drain-source current is increased as electrons are drawn through the gate, thus turning on the IGFET.

The DMNH4026SSDQ-13 has a relatively low thermal resistance of 0.06K/W, making it well-suited for applications where heat dissipation is an issue. It also features a low leakage current of 0.1uA, which allows it to follow rapidly changing input signals without introducing a significant amount of additional current into the circuit. Additionally, this array of MOSFETs has an excellent pulse-handling capability, making it an ideal choice for high-speed, high-precision switching and motion control applications.

In conclusion, the DMNH4026SSDQ-13 is an array of N-channel insulated-gate field effect transistors with 20 channels. It is designed for a variety of applications due to its low-output on-state resistance, high-frequency response, and relatively low power requirements. The threshold voltage of 2.3 V and thermal resistance of 0.06K/W provide excellent performance for high-precision switching and motion control applications. Its low leakage current of 0.1uA also ensures that it can quickly and reliably respond to rapidly changing input signals.

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