
Allicdata Part #: | DMNH10H028SCTDI-5-ND |
Manufacturer Part#: |
DMNH10H028SCT |
Price: | $ 1.17 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET BVDSS: 61V 100V,TO220-3,T |
More Detail: | N-Channel 100V 60A (Tc) 2.8W (Ta) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 149 |
1 +: | $ 1.06470 |
50 +: | $ 0.85201 |
100 +: | $ 0.74554 |
500 +: | $ 0.57815 |
1000 +: | $ 0.45644 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1942pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 31.9nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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DMNH10H028SCT Application Field and Working Principle
DMNH10H028SCT is an N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) used in a wide range of electronics applications. This type of device is used to control the voltage in a circuit and is available in both surface-mount and discrete packages. It is also suitable for use in a variety of other applications such as switching, modulating, and buffering.
MOSFETs are the most common transistor type in modern electronics and are used in a wide range of applications. The DMNH10H028SCT is an example of an N-Channel MOSFET, meaning that it passes electrons from its source terminal to the drain terminal with an applied voltage between gate and source.
This device can handle a wide range of voltages and currents, making it suitable for a variety of applications. It is often used in switching and power management applications, such as in motor control circuits, as well as in amplifiers and in various types of digital circuits. It can also be used in power supply circuits and can be used for rectification and voltage regulation.
The working principle of the DMNH10H028SCT is based on the concept of the metal-oxide-semiconductor field-effect transistor, or MOSFET. In this type of device, the gate electrode is placed between the source and drain electrodes and acts as a capacitance. The capacitance is affected by the voltage applied to the gate, which in turn controls the flow of electrons between the source and drain terminals.
When no voltage is applied to the gate electrode, the MOSFET is considered to be in its “off” state. This means that no current will be able to pass through the source and drain electrodes. When a voltage is applied to the gate electrode, the capacitance is reduced and the MOSFET will act as a switch and allow current to pass through the source and drain terminals.
The efficiency of the device increases when the voltage is increased, and so the device is usually operated at its highest voltage in order to maximize its efficiency. The DMNH10H028SCT device can handle a wide range of voltages, making it suitable for a variety of applications.
The DMNH10H028SCT is a single MOSFET, meaning that there is only one drain and one source. This type of device is used for simple on/off switching and is particularly useful for digital circuits. It can also be used to control larger currents and voltages, making it very versatile.
The DMNH10H028SCT is an example of a high-speed MOSFET and is designed to switch quickly between its on and off states. This makes it suitable for use in timing circuits, pulse width modulation (PWM) circuits, and other applications where a fast switching time is required.
The DMNH10H028SCT is a high-performance MOSFET, and is therefore suitable for use in a variety of applications. It is available in both surface-mount and discrete packages, making it very easy to integrate into existing circuits. As it is a single MOSFET, it is also very simple to use and requires minimal wiring. This makes it an ideal choice for applications such as high-speed switching, power management, and various types of digital circuits.
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