Allicdata Part #: | DMNH10H028SK3-13DITR-ND |
Manufacturer Part#: |
DMNH10H028SK3-13 |
Price: | $ 0.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 55A TO252 |
More Detail: | N-Channel 100V 55A (Tc) 2W (Ta) Surface Mount TO-2... |
DataSheet: | DMNH10H028SK3-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.40572 |
Vgs(th) (Max) @ Id: | 3.3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2245pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 55A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMNH10H028SK3-13 is a single N-channel enhancement-mode Power MOSFET with a low on-resistance and low gate charge. This type of transistor is used to control electrical signals and currents in many intricate circuits and can act as a switch or amplifier.The DMNH10H028SK3-13 is typically used in advanced gate drive circuits, DC-DC converters, battery management systems, and motor control.
DMNH10H028SK3-13 Working Principle
A MOSFET is a type of transistor which relies on an electric field to control current flow. The device is made of a semiconductor material, typically silicon, and contains an insulated gate which is surrounded by a source and a drain. When a voltage is applied to the gate, it modifies the electric field in the area between the source and the drain. This modification in the electric field control current flow from the source to the drain.
The DMNH10H028SK3-13 works by using a low threshold voltage to turn the transistor on. Current flow is then controlled by the voltage applied across the gate and the source. As the voltage between the gate and the source increases, the current flow between the source and the drain also increases.
This MOSFET also has a low on-resistance, meaning that it requires less voltage to turn it on. This in turn reduces power losses and improves the efficiency of the device. The device also has a low gate charge, enabling it to respond quickly to changing voltage levels.
DMNH10H028SK3-13 Application Field
The DMNH10H028SK3-13 is used in a wide range of applications. It is often used in power management applications where reliable and efficient control of current is required. It is often used in gate drive circuits, DC-DC converters, battery management systems and motor control.
The device is also used in low voltage and high frequency applications due to its low threshold voltage and gate charge. Furthermore, it is also used in automotive, industrial and consumer electronics applications due to its low on-resistance and fast switching times.
Conclusion
The DMNH10H028SK3-13 is a single N-channel enhancement-mode Power MOSFET with a low on-resistance and low gate charge. It is typically used in advanced gate drive circuits, DC-DC converters, battery management systems, and motor control. The device is used in a wide range of applications due to its low on-resistance, low threshold voltage, and fast switching times.
The specific data is subject to PDF, and the above content is for reference
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