DMNH4006SK3-13 Allicdata Electronics
Allicdata Part #:

DMNH4006SK3-13DITR-ND

Manufacturer Part#:

DMNH4006SK3-13

Price: $ 0.67
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 40V 18A TO252
More Detail: N-Channel 40V 18A (Ta), 90A (Tc) 2.2W (Ta) Surface...
DataSheet: DMNH4006SK3-13 datasheetDMNH4006SK3-13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.60249
Stock 1000Can Ship Immediately
$ 0.67
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2280pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 6 mOhm @ 86A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMNH4006SK3-13 is a single depletion-mode logic-level MOSFET from Diodes Inc, primarily intended for use in op-amp circuits. It offers very good ESD protection, with an on-resistance of, roughly, 1.2 ohms and a drain-source voltage of 30V. It is suitable for use in both AC and DC applications. The DMNH4006SK3-13 MOSFET is also capable of operating at very high speeds, with a switching time of about 3 nanoseconds and a power dissipation of about 500 mW. Its applications include power switching, data switching, and level shifting.

A MOSFET is a type of Field-Effect Transistor (FET) device, composed of source, gate and drain regions, which are formed from a semiconductor. The MOSFET operates by using a gate voltage to control the flow of current through the device. The DMNH4006SK3-13 MOSFET uses a depletion-mode operation, in which the device is normally "on", and when the gate voltage is applied, the device is turned "off". The current is described as "leaking" through the device when it is "on" and it is described as "cut-off" when it is "off".

The DMNH4006SK3-13 MOSFET is used to control the application of power, and it can be used in a variety of applications. It is commonly used in circuits that require a low on-resistance, such as in motor-control circuits and other power switching applications. In addition to power switching, the DMNH4006SK3-13 MOSFET is often used in data switching, level shifting, and other logic applications. The device is also useful in amplifier circuits, as it can be used to isolate and bias inputs, as well as providing the necessary current gain for the circuit.

The DMNH4006SK3-13 MOSFET is particularly useful in low voltage applications, as it has an ultra low on-resistance and very good ESD protection. Its high speed switching makes it ideal for higher frequency applications, as well as providing an optimal level of power efficiency. Its logic-level operating voltage also makes it ideal for use in logic-level designs, as it can be used to accurately and reliably measure and control logic levels. The DMNH4006SK3-13 MOSFET is also available in a variety of packages, including surface mount and dual-in-line forms.

In summary, the DMNH4006SK3-13 MOSFET is a single depletion-mode logic-level MOSFET from Diodes Inc that offers very good ESD protection, an ultra low on-resistance and a very high switching speed. It is primarily intended for use in low voltage applications, such as motor-control circuits, data switching and level shifting. In addition to its low voltage capabilities, the DMNH4006SK3-13 MOSFET is also capable of providing optimal power efficiency and accurate logic level measurements. The DMNH4006SK3-13 MOSFET is available in a variety of packages, making it suitable for use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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