DMNH4011SPS-13

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PowerDI5060-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1.5W (Ta), 100W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1405pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	25.5nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	10 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	13A (Ta), 80A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IntroductionThe DMNH4011SPS-13 is a power MOSFET with an encapsulation that provides excellent stability and durability. It is a low-cost and highly efficient FET designed for a wide range of applications. It has superior immunity to static and hot-switching electrical overloads, and offers superior performance in most switch-mode power supply designs. Additionally, it has a high frequency capability and a low heat dissipation rate.What is a MOSFET?A metal oxide semiconductor field effect transistor or MOSFET is a type of field effect transistor (FET). It is a three terminal device, which changes electrical current or voltage through a semiconductor layer known as its gate oxide. The gate oxide is between the two semiconductor drain and source terminals, and is referred to as the device’s ‘channel’. The voltage applied across the gate terminal determines the current flow through the device, and is its primary control parameter.DMNH4011SPS-13 Application Field and Working PrincipleThe DMNH4011SPS-13 is most often used in switch-mode power supply designs (SMPSs) where high frequency switching is required. As an N-channel MOSFET, it is composed of a channel between the source and drain regions. The channel is formed from a thin layer of silicon dioxide (SiO2) and is selectively modulated between its on and off states by the gate voltage.When a positive gate voltage is applied to the device, current flows through the switch and the drain-source resistance drops. This process is known as enhancement mode. When the gate voltage is negative, the drain-source resistance will increase, which is known as the depletion mode. The physical properties of the semiconductor channel in the device allow it to support high frequency switching operations. Given the DMNH4011SPS-13’s features, it is especially well suited for use in applications that require low-side switching. It is also suitable for use in high-side switch mode power supplies, which may require an external resistor to ensure proper current flow. Additionally, this MOSFET is capable of withstanding high voltage spikes, which can be especially useful in industrial applications.ConclusionIn conclusion, the DMNH4011SPS-13 is an efficient and cost-effective FET designed for applications requiring high frequency switching operations. It is composed of a thin layer of SiO2 between its source and drain regions, and is capable of withstanding high voltage spikes due to its superior immunity to electric overloads. This makes it a suitable choice for switch-mode power supplies, as well as industrial applications. Furthermore, it has a low heat dissipation rate and can be used in low-side and high-side switching.

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