DMNH10H028SPSQ-13 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PowerDI5060-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1.6W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2245pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	36nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	28 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	40A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The DMNH10H028SPSQ-13 is a common source-gate Field Effect Transistor (FET) made by multiple manufacturers. As a single FET, it is typically employed as an amplifier in a wide variety of applications, including radio-frequency receiver design and signal switching applications.

The Construction of the DMNH10H028SPSQ-13

The DMNH10H028SPSQ-13 consists of an intrinsic laminar semiconductor, which is gated and directed by electrons. It is a unipolar electronic device, meaning current is conducted by only one type of charge carrier: negatively charged electrons. The DMNH10H028SPSQ-13 contains three terminals: the source, gate, and drain, spread out on the semiconductor material in a manner that allows the current to flow between them.

Working Principle

The working principle of the DMNH10H028SPSQ-13 is fairly straightforward. The source terminal supplies electrons or holes. When the voltage applied to the gate is made positive with respect to the source, a conductive layer is formed over the intrinsic laminar semiconductor material allowing current to flow from the source to the drain. This form of operation is known as the enhancement mode.In contrast, a negative gate voltage leads to an inverse effect. A depletion region is now formed between the source and the drain leading to a cessation of the current flow. This can be used for switching signals in digital applications.

Application Field of the DMNH10H028SPSQ-13

The DMNH10H028SPSQ-13 is a standard FET used in a wide range of applications ranging from low-frequency amplification to high-frequency recievers. The device can be used in both analogue and digital circuitry and is often integrated within circuit boards, providing an efficient and reliable operation.In highfrequency receiver designs, the DMNH10H028SPSQ-13 is often used as an amplifier and a switch, with its enhancement and depletion mode of operation respectively. This means the DMNH10H028SPSQ-13 can be used to control signals in both the analogue and digital domain.In addition, the FET\'s high input impedance and gain allow it to be used as an amplifier for low-frequency signals. This is beneficial in applications such as audio amplifiers and signal conditioning circuits, where the FET can boost signals with very little noise and distortion.

Conclusion

The DMNH10H028SPSQ-13 is a single FET device used as an amplifier and switch in a variety of applications. Its intrinsic laminar semiconductor structure and gate voltage control lead to an enhancement or depletion mode of operation depending on the input voltage applied. This allows the FET to be used in a wide range of applications and digital or analogue circuitry, providing an efficient and reliable operation.

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