Allicdata Part #: | DMNH4005SCT-ND |
Manufacturer Part#: |
DMNH4005SCT |
Price: | $ 1.52 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 40V 150A TO220AB |
More Detail: | N-Channel 40V 150A (Tc) 165W (Tc) Through Hole TO-... |
DataSheet: | DMNH4005SCT Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.36647 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 165W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2846pF @ 20V |
Vgs (Max): | 20V |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 150A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Cut Tape (CT) |
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A field effect transistor (FET) is an electronic device which functions as a three-terminal switch. It works by controlling the flow of current between the drain and the source, and is used in a wide range of different applications. The DMNH4005SCT is a single N-channel MOSFET (metal oxide semiconductor field effect transistor). This type of transistor offers a number of advantages over other types of FETs, making it particularly suitable for switching and amplifying applications.
The DMNH4005SCT is a field effect transistor (FET) and a controllable source of electron conductivity. It is composed of a metal oxide semiconductor (MOS) which acts as a gate. The gate is insulated from the rest of the device by a gate oxide layer. When a voltage is applied to the gate electrode, it creates an electric field which is used to control the current flow between the source and drain. This is referred to as field effect control.
The DMNH4005SCT is capable of handling a high current load with minimal power dissipation. This makes it suitable for use in high-power applications, such as motor control, power supplies and switching applications. It is also capable of high speed switching, allowing it to be used in switching applications such as frequency modulation and pulse width modulation. The low voltage threshold of the DMNH4005SCT also makes it suitable for operation at low voltages, making it ideal for low-power applications.
The DMNH4005SCT is also known for its excellent performance in switching and amplifying applications. As the source and drain electrodes are insulated from each other, a large voltage can be applied to the gate without causing a large current flow. This allows the transistor to switch on and off with high speed and accuracy, making it an ideal choice for switching applications. Additionally, the high current-handling capability of the DMNH4005SCT means it can also be used for amplifying signal rates. In addition, the low threshold voltage of the device means that it can operate at low power levels, making it suitable for low-power applications.
The DMNH4005SCT is one of the most popular single N-channel MOSFETs on the market. Its versatility and high performance in switching and amplifying applications make it an ideal choice for a wide range of applications. From power supplies to motor control, the DMNH4005SCT is an excellent choice.
The specific data is subject to PDF, and the above content is for reference
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