DMNH4011SPSQ-13 Discrete Semiconductor Products

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The DMNH4011SPSQ-13 is a high voltage MOSFET with a logic-level gate. It is a lateral N-channel MOSFET that is suitable for many applications in a wide range of industries, including consumer electronics, lighting, telecommunications, and automotive. This device features a maximum V_DSS of 400V, a maximum drain current of 15A, a maximum gate-source voltage of +/- 20V, and a low on-resistance of 12.8 mΩ @ 10V.

This field effect transistor is perfect for applications that require higher levels of power than than a standard MOSFET. Designed to be fairly robust and able to handle large amounts of power, it has a wide operating temperature range, and can contain power up to 265W. It also has low gate-source feedback, making it ideal for switch-mode power supplies.

The DMNH4011SPSQ-13 works by active current flow through the device when the voltage on the gate is greater than that of the source. This creates an electrical field that attracts electrons from the source, allowing current to flow from the drain to the source. The device has an output capacitance, which is necessary for certain applications, such as RF amplifiers. The DMNH4011SPSQ-13 is also protected against thermal runaway (also known as thermal breakdown) due to its unique structure and design.

The DMNH4011SPSQ-13 offers many advantages over traditional MOSFETs, such as low gate-source feedback, low on-resistance, and higher power ratings. It is also easier to switch, making it ideal for applications where high switching speeds are required. Additionally, it has a wide operating temperature range, meaning it can be used in most environments without issue. Furthermore, its small package size allows it to fit into many applications and in tight spaces.

In conclusion, the DMNH4011SPSQ-13 is a high voltage MOSFET with a logic-level gate that is perfect for many applications. It has a wide operating temperature range, low gate-source feedback, low on-resistance, and higher power ratings. Additionally, it has a small package size and can be operated at high switching speeds. All of these features make this device ideal for applications that require higher levels of power and performance.

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