Allicdata Part #: | DMNH6021SPD-13-ND |
Manufacturer Part#: |
DMNH6021SPD-13 |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2NCH 60V 8.2A POWERDI |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 8.2A, 32A 1.5W... |
DataSheet: | DMNH6021SPD-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.28400 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 8.2A, 32A |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20.1nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1143pF @ 25V |
Power - Max: | 1.5W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerDI5060-8 |
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The DMNH6021SPD-13 is a type of field effect transistor (FET) array which is mainly used in applications where high efficiency is required, such as in automotive electronics, power supplies and digital signal processing. The DMNH6021SPD-13 is a multi-channel array consisting of two independent 12-channel FETs. The FETs are based on a Silicon-on-Insulator (SOI) process and are designed with low on-resistance and low leakage current. Additionally, the DMNH6021SPD-13 has a built-in reverse voltage protector which helps protect the connected circuits from overvoltage.
The DMNH6021SPD-13’s main working principle is to control the movement of charge carriers. This is done via the use of an electric field. By applying an energy source to the gate of the FET, it is able to “switch” on or off the flow of current in the transistor. This is why FETs are also known as “field effect” transistors. When the FET is “off”, the current flow will be blocked, thus giving the user the ability to control the current flowing through the circuit.
The DMNH6021SPD-13’s application fields include power switching, signal conditioning, signal amplification, and analog and digital interfaces. It is commonly used in automotive electronics as a switch or amplifier, in power supplies as a switch or regulator, or in digital signal processing as a digital multiplexer. Additionally, it is also used in low noise pre-amplification, as well as in low power analog circuit design. Furthermore, it can also be used for signal conditioning and motor control applications.
The DMNH6021SPD-13 has a number of advantages over other types of FETs, including a low on-resistance, low leakage current, and a built-in reverse voltage protector. Additionally, it is a highly efficient transistor which is suitable for a variety of applications. Furthermore, it is easy to use and limited external components are needed in the design of circuits featuring the DMNH6021SPD-13.
In conclusion, the DMNH6021SPD-13 is a type of FET array which is mainly used in applications where high efficiency is required. The DMNH6021SPD-13’s main working principle is to control the movement of charge carriers via the use of an electric field. Its application fields include power switching, signal conditioning, signal amplification, and analog and digital interfaces. Additionally, the DMNH6021SPD-13 has a number of advantages over other types of FETs, making it a suitable choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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