DMNH10H028SK3Q-13

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DMNH10H028SK3Q-13 is a single N-channel MOSFET (Metal Oxide Field Effect Transistor) that is a type of transistor used as a switch or amplifier. It is a type of transistor that is commonly used in power management applications due to its relatively low on-resistance, low noise and immunity to latchup.

Application Field

DMNH10H028SK3Q-13 is mainly used in applications requiring medium-power switching and low on-resistance. It is also a suitable choice for high-side switching as well as gate driving applications. In addition, this MOSFET can be used in high-speed switching (20 to 100 ns) and in low-voltage digital and analog applications.

This MOSFET is also capable of conducting up to 10 amps of current through its drain for extended periods of time with a densely-packed circuit board. This makes it suitable for use in a variety of applications including, but not limited to, motor control, HVAC, power factor correction, and lighting.

Working Principle

DMNH10H028SK3Q-13 is a type of FET (field effect transistor) known as an enhancement-mode MOSFET. This type of transistor is based on a structure in which the gate is insulated from the body of the transistor by a thin layer of highly resistive material, such as silicon dioxide (SiO2).

When voltage is applied to the gate terminal, it induces a conducting layer of electrons (the inversion layer) in the channel by electrostatic attraction. As a result, the source-drain resistance is reduced and current flows through the channel.

The value of the gate voltage required to achieve the inversion layer determines the threshold voltage, Vt, which is usually specified for the particular MOSFET.

The current flow is controlled by the applied gate voltage, enabling the current to be switched on and off. This is why this MOSFET is commonly used in power management applications.

The DMNH10H028SK3Q-13 is protected with a built-in inverse current protection mechanism. This mechanism helps protect the MOSFET against possible current inversion failure, thereby increasing the reliability of the power supply.

Conclusion

In conclusion, the DMNH10H028SK3Q-13 is a single N-channel MOSFET that is suitable for use in a wide range of applications including motor control, HVAC, power factor correction, and lighting. It has low on-resistance, low noise and immunity to latchup, making it a popular choice for power management applications. In addition, this MOSFET is protected by a built-in inverse current protection mechanism, which enhances the reliability of the power supply.

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