DMNH10H028SPS-13 Allicdata Electronics

DMNH10H028SPS-13 Discrete Semiconductor Products

Allicdata Part #:

DMNH10H028SPS-13DITR-ND

Manufacturer Part#:

DMNH10H028SPS-13

Price: $ 0.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 100V 40A POWERDI
More Detail: N-Channel 100V 40A (Tc) 1.6W (Ta) Surface Mount Po...
DataSheet: DMNH10H028SPS-13 datasheetDMNH10H028SPS-13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.39558
Stock 1000Can Ship Immediately
$ 0.43
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2245pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 28 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DMNH10H028SPS-13 is a type of single-gate metal oxide semiconductor field effect transistors (MOSFETs). Typically, MOSFETs are used to amplify or switch electronic signals, providing key elements to various circuits. This type of device is used for various applications, including motor control applications and audio amplification systems.

DMNH10H028SPS-13 belongs to a power MOSFET family, with a drain-source voltage VDS of 600V and current ID of 21A. It has low RDS(on) of 0.016Ohm, making it suitable for switching circuit applications. Due to its relatively small package size of TO-220, it is widely used in space-limited applications. This model also has extended temperature range and wide safe operating area, ensuring its reliability even under high current and voltage conditions.

When a voltage is introduced to the gate terminal of the device, a current will flow through the substrate and is known as the gate current. This will cause an accumulation of positive and negative charges at the source and drain terminals, creating electric fields that attract and repel the positive and negative charge carriers, depending on the direction applied. This creates an area that acts as an insulator between the source and drain terminal, thereby reducing current flow and as a result, power dissipation. This type of field effect is called an electrostatic field effect and is unique to the MOSFET.

The working principle of DMNH10H028SPS-13 can be summarized as follows. When a voltage is applied to the gate terminal, an electric field is created between the source and drain terminals, reducing current flow and resulting in power dissipation. This type of device is widely used in circuits that require power switching, motor control applications and audio amplification. Its small package size and extended temperature range make it suitable for use in space-limited applications.

DMNH10H028SPS-13 is a highly versatile device with a wide range of uses. It is suitable for a variety of applications and can provide reliable performance under extreme conditions. Its small package size and extended temperature range make it an ideal choice for space-limited and low-temperature applications. With its low Rdson, it is suitable for motor control applications and audio amplification systems.

The specific data is subject to PDF, and the above content is for reference

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