DMP1046UFDB-7 Discrete Semiconductor Products |
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Allicdata Part #: | DMP1046UFDB-7DITR-ND |
Manufacturer Part#: |
DMP1046UFDB-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2P-CH 12V 3.8A 6UDFN |
More Detail: | Mosfet Array 2 P-Channel (Dual) 12V 3.8A 1.4W Surf... |
DataSheet: | DMP1046UFDB-7 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A |
Rds On (Max) @ Id, Vgs: | 61 mOhm @ 3.6A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17.9nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: | 915pF @ 6V |
Power - Max: | 1.4W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | U-DFN2020-6 (Type B) |
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The DMP1046UFDB-7 is a dual N-Channel MOSFET transistor array. It includes two Power MOSFETs integrated on the same chip. This device is suitable for various applications due to its low drain-to-source resistance, fast switching speed and high temperature and voltage ratings.
The DMP1046UFDB-7 array is designed for high current and low power operations, making it ideal for applications like motor and solenoid drive, Automotive electronics, Battery management and various other industrial applications.
The two Power MOSFETs in the DMP1046UFDB-7 array have drain-source voltage ratings of 700 Volts and a low drain-source resistance. They are capable of providing high currents, making them ideal for high voltage, high power applications. Additionally, the device has an operating temperature range of -55 to +150 °C, making it a reliable and robust solution for industrial applications. The low drain-to-source resistance of the device makes it an ideal choice for applications that require high efficiency and low power dissipation.
The operating principle of the DMP1046UFDB-7 array is based on the P-channel and N-channel metal oxide semiconductor (MOSFET). The device contains an insulated gate which is activated by an electric charge. When an electric charge is applied to the gate, it creates a conductive path between the drain and source. This creates a flow of current from the source to the drain, or from the drain to the source, depending on the polarity of the applied voltage.
The MOSFET device can be used for various applications such as power switching, voltage regulation and logic control. The device can also be used in motor and solenoid drive, Automotive electronics, Battery management, motor speed control, motor soft start and various other applications.
In conclusion, the DMP1046UFDB-7 dual N-Channel MOSFET array is an ideal solution for high current, low power operations. It has a low drain-source resistance, fast switching speed and a wide temperature and voltage rating. The device is widely applicable in industrial, automotive and battery management applications, making it a reliable and robust solution.
The specific data is subject to PDF, and the above content is for reference
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