DMP1022UFDF-13

Vgs(th) (Max) @ Id:	800mV @ 250µA
Package / Case:	6-UDFN Exposed Pad
Supplier Device Package:	U-DFN2020-6 (Type F)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	730mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2712pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	48.3nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	14.8 mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	9.5A (Ta)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The DMP1022UFDF-13 is a dual N-Channel MOSFET that can be used in a variety of applications. It has a maximum drain current of 10A and can operate at a voltage up to 100V. This makes it an attractive option for many applications ranging from automotive to consumer electronics. In this article, we will look at the application field and working principle of the DMP1022UFDF-13 and discuss how it can benefit your designs.

Application Field

The DMP1022UFDF-13 is a versatile device that is suitable for many applications. Its high drain current and low on-resistance makes it an ideal choice for high-current switching and power conversion applications. It is commonly used for motor control, switching power supplies, DC-DC converters, and other power conversion applications. It can also be used in automotive applications such as fuel pump control, power window control, and headlights. Due to its low on-resistance and fast switching speed, it is also suitable for RF applications such as switching amplifiers and power amplifiers.

Working Principle

The DMP1022UFDF-13 is a dual n-channel MOSFET, meaning it has two n-channel transistors connected in parallel. The gate of the MOSFET is connected to a voltage source and the source and drain are connected to the circuit load. When a voltage is applied to the gate of the MOSFET, the gate-to-source capacitance is charged, which in turn causes a small current to flow into the gate-source junction. This causes a change in the potential barrier at the junction, allowing current to flow from the source to the drain. In the “off” state, the potential barrier is high and the current flow is blocked. The drain current can be controlled by varying the voltage at the gate. When the gate voltage is increased, the potential barrier is lowered and the current flow is increased. This can allow for precision current control over a wide range of voltages.

Conclusion

The DMP1022UFDF-13 is a versatile dual n-channel MOSFET that can be used in a wide variety of applications. Its high drain current and low on-resistance make it an ideal choice for high-current switching and power conversion applications. It is also suitable for automotive and RF applications due to its fast switching speeds and low on-resistance. The device’s gate voltage can be used to precisely control the drain current, making it an attractive option for many applications.

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