DMP1200UFR4-7 Allicdata Electronics

DMP1200UFR4-7 Discrete Semiconductor Products

Allicdata Part #:

DMP1200UFR4-7DITR-ND

Manufacturer Part#:

DMP1200UFR4-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 12V 2A X2-DFN1010-3
More Detail: P-Channel 12V 2A (Ta) 480mW (Ta) Surface Mount X2-...
DataSheet: DMP1200UFR4-7 datasheetDMP1200UFR4-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 3-XFDFN
Supplier Device Package: X2-DFN1010-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 480mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 5V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DMP1200UFR4-7 Application Field and Working Principle

The DMP1200UFR4-7 is a dual monolithic power MOSFET technology in a power-packages has been developed to reduce costs and reduce electrical losses in high-efficiency, cost-effective power conversion. The DMP1200UFR4-7 is intended for high-frequency motor control, battery management, lighting, and other power switching applications.

The DMP1200UFR4-7 uses an advanced high-voltage lateral MOSFET (HVLDMOS) technology that enables the design of power solutions that require high-frequency and high operating temperature performance in a broad range of temperature ranges and operating conditions. The device uses a single, adjustable substrate bias voltage to increase device density, as well as provide improved thermal performance in power circuits with large power wring. The device also features a floating source connection to simplify design of multiple-source solutions.

The device has an optimized device architecture and process resulting in improved RDS(ON) and gate charge ratings, allowing for higher speed operation with lower switching losses. It also features an improved gate threshold that provides for more accurate turn-off control.

The DMP1200UFR4-7 offers excellent thermal performance and is designed to provide a low-resistance solution for applications requiring high power such as motor control, lighting, and battery management. It is also suited for high frequency switching applications, with a full-on current as high as 48 Amps and an RDS(ON) of 9.3 mΩ. It features a single drain-to-source resistor for increased power dissipation and improved thermal dissipation.

The device is designed to be operated with a wide input voltage range with a high withstand voltage of 12V, which makes it applicable to various applications. The wide output voltage swing of 3.5V to 20V helps the device to drive loads with higher current rating. The integrated small body diode helps to minimize switching losses and its lowest forward voltage drop helps to reduce overall power loss. The integrated charge pump provides the drive voltage to the gate of the power MOSFET, enabling fast switching with minimum switching loss and increasing efficiency in motor control applications.

The device is designed to operate in a wide range of temperature and high-frequency switching conditions. It provides an attractive power-to-space ratio, enabling it to be used in a variety of applications. The small package size of the device also allows it to be used in tight spaces with limited space availability. The device is ideal for high-temperature and high-frequency applications such as motor control, lighting, and battery management.

The specific data is subject to PDF, and the above content is for reference

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