DMP1045UQ-7

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	800mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1357pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	15.8nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	31 mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	4A (Ta)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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DMP1045UQ-7 is a high efficient enhancement mode field effect transistor (FET) and one of the latest products of Fairchild Semiconductor. The device is an N-Channel FET, specifically optimized for high switching performance in brushless motor control and high temperature industrial applications. The FET is available in three normally-open packages: DNP1045UQ-7 (DFN), DMP1045UQ-7 (SOT-23), and DSP1045UQ-7 (SOT-663). It has a maximum operating voltage of 100V, allowing it to be a great fit for high-voltage power switching applications. The device also rated at a current of 3.5A at 25°C and a continuous drain current of 7.5A. The device features a fast turn-on speed of 350ns and a low-frequency duty-cycle of 8nC. It also has a high breakdown voltage, ESD protection capability and improved transient thermal conductivity. The FET also has a wide range of gate drive capabilities due to its low on-state resistance typically 6.5mΩ with low gate charge and fast switching time up to 10A, making it an ideal choice for high power switching applications. The device is designed to be compatible with standard gate driver and control ICs, enabling fast switching and energy efficient operation, as well as low power dissipation required by many low power, portable switching applications. This device is also highly reliable, with a rated reverse stand-off voltage of up to 20V, low on-state resistance and a low threshold voltage. In addition, it allows for reliable operation in temperature trending from -40°C to 110°C junction temperature.The FET uses a process technology called the FUJI-UJ process, which combines high-performance encapsulation techniques with stress-reducing components to reduce gate reactance and gate-source capacitance, resulting in less switching noise and better control of parasitic parameters. It also has Ultra-Low Gate Impedance, allowing improved switching speed, lower losses and improved noise immunity. This device also features a high-side N-channel MOSFET, which is suitable for high current, high-side switching applications. It is characterized by rugged low on-resistance, low power dissipation and fast switching speed.To summarize, the DMP1045UQ-7 is a high efficient enhancement mode FET that is optimized for high switching performance in brushless motor control and high temperature applications. Its fast turn-on speed, ESD protection capability and improved transient thermal conductivity make it ideal for high voltage power switching as well as low power, portable applications. The FET also has an Ultra-Low Gate Impedance and a high-side N-channel MOSFET, which makes it suitable for high current and high-side switching applications.

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