DMP1096UCB4-7 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	4-UFBGA, WLBGA
Supplier Device Package:	U-WLB1010-4
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	820mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	251pF @ 6V
Vgs (Max):	-5V
Gate Charge (Qg) (Max) @ Vgs:	3.7nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	102 mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	2.6A (Ta)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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DMP1096UCB4-7 Application Field and Working Principle

DMP1096UCB4-7 is a type of transistor, more specifically a type of field effect transistor (FET), specifically a metal-oxide-semiconductor FET (MOSFET). It is a single-gate device, meaning it has only one gate terminal for controlling the current flow. This type of transistor is commonly used as an amplifier or switch for use in audio, video, and communication applications, as well as in motor control and power management.The working principle of a MOSFET is based on the use of an electric field to modify the electrical behavior of a p-type semiconductor. P-type semiconductors are those that contain an excess number of electrons, while N-type semiconductors are those that contain an excess number of holes (a deficiency of electrons). A MOSFET works by having an electric field generated by the gate terminal applied to the p-type portion of the device, known as the channel region.The electric field created by the gate terminal applies a “depletion” effect on the channel region, which essentially creates an insulation layer. This insulation layer allows for the current to flow through the device, when the gate terminal is used to control the channel region. This gate terminal can be used to either open the channel (if the electric field is positive) or close the channel (if the electric field is negative).When the device is being used as an amplifier, the current flow through the drain is regulated by the amount of voltage applied to the gate. Depending on the amount of voltage applied, the current flow can be regulated from zero to a maximum current set by the manufacturer (or user). This variable current flow makes MOSFETs ideal for use in amplifier applications, as the current can be adjusted to match the incoming signal while still maintaining low power consumption and high levels of efficiency.In its most basic form, a MOSFET works by applying a voltage to the gate terminal, which causes the electric field to increase or decrease, thus controlling the current flow through the device. This type of transistor is an ideal choice for applications where efficiency, low power consumption and robustness are needed, due to its relatively low gate voltage requirements, as well as its stability in high temperature environments.The DMP1096UCB4-7 is a single-gate device, meaning it has only one gate for controlling the current flow. It is a standard MOSFET, with the gate terminal allowing the user to control the current flow through the device. This is accomplished through the electric field generated by the gate, which can either open or close off the channel depending on the amount of voltage applied.In short, the DMP1096UCB4-7 is an ideal choice for a wide range of audio, video, and communication applications, due to its low gate voltage requirements, stability in high temperature environments, and efficiency. The single-gate design allows the device to be used in analog or digital applications, and makes it an ideal choice for motor control and power management.

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