DMP1022UFDF-7 Allicdata Electronics
Allicdata Part #:

DMP1022UFDF-7DITR-ND

Manufacturer Part#:

DMP1022UFDF-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 12V 9.5A U-DFN2020-6
More Detail: P-Channel 12V 9.5A (Ta) 730mW (Ta) Surface Mount U...
DataSheet: DMP1022UFDF-7 datasheetDMP1022UFDF-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Gate Charge (Qg) (Max) @ Vgs: 48.3nC @ 8V
Base Part Number: DMP1022
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type F)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 730mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2712pF @ 10V
Vgs (Max): ±8V
Series: --
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMP1022UFDF-7 is a single N-Channel Metal–Oxide–Semiconductor Field Effect Transistor (MOSFET), used mainly in non-synchronous rectifiers. This device offers fast switching times and logic level drain-source voltages, coupled with low on-resistance resistance, making it ideal for high current and low voltage applications. The drain-source on resistance is only 24 mOhms, making it suitable for rectification in applications requiring a low resistance, such as in DC–DC converters, computers, and servers.

The DMP1022UFDF-7 currently offers the lowest on-resistance available on the market, allowing for smaller gate capacitance and higher switching speeds. In comparison to comparable MOSFETs, such as the DMP1020UFDF-7, this model offers the same on-resistance value (24 mOhms), but a significantly higher drain current at 27A. This makes the DMP1022UFDF-7 an ideal choice for applications requiring high current in limited space, such as in laptop and notebook computers.

In terms of its working principle, MOSFETs are three-terminal devices that are composed of two P-type regions and one N-type region. The source and drain terminals of the device are connected to the two P-type regions, while the gate terminal is connected to the N-type region. When the gate voltage (VGS) is increased, the holes in the P-type regions of the MOSFET will be repelled away, creating a channel between the source and drain regions. A voltage applied to the drain terminal (VD) will result in a current flowing through the channel, thus enabling current to flow from the drain to the source of the MOSFET.

Due to its low voltage, low on-resistance, and fast switching times, the DMP1022UFDF-7 is suitable for use in a variety of applications, such as DC–DC converters, computers, servers, and power supplies. In addition, the device is fully RoHS compliant and is suitable for use in environments where low resistance is required. As such, the device is ideal for rectification applications, such as those found in laptop and notebook computers.

Overall, the DMP1022UFDF-7 is an ideal choice for applications that require a low on-resistance and fast switching times, such as in rectification applications. With its low voltage, low on-resistance, and fast switching times, the device is suitable for use in a variety of applications, ranging from computers and servers to DC–DC converters and power supplies. In addition, the device is RoHS compliant and is an ideal choice for applications where low resistance is required.

The specific data is subject to PDF, and the above content is for reference

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