DMP1022UFDE-7 Allicdata Electronics

DMP1022UFDE-7 Discrete Semiconductor Products

Allicdata Part #:

DMP1022UFDE-7DITR-ND

Manufacturer Part#:

DMP1022UFDE-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 12V 9.1A 6UDFN
More Detail: P-Channel 12V 9.1A (Ta) 660mW (Ta) Surface Mount U...
DataSheet: DMP1022UFDE-7 datasheetDMP1022UFDE-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 800mV @ 250µA
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type E)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 660mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 4V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 42.6nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 16 mOhm @ 8.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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This article discusses the application field and working principle of the DMP1022UFDE-7, a single transistor Field-Effect Transistor (FET).

Field-Effect Transistors (FETs) are solid-state devices that allow current flow controlled by an input voltage or electrical signal. FETs are made up of three terminals, the source (S), the gate (G) and the drain (D). A FET\'s operating characteristics are determined by the type of semiconductor material used to form the transistor. FETs are available in bipolar and unipolar varieties and can be used in a variety of switches, amplifiers, modulators, signal processors, and transducers. The DMP1022UFDE-7 is an unipolar FET.

The DMP1022UFDE-7 is a single Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). These transistors require a high capacitance gate in order to operate correctly. This gate capacitance is usually supplied by a parallel capacitor connected between the gate and ground. The DMP1022UFDE-7 is designed for a wide range of applications, including power-supply switching, high voltage amplifying, analog signal processing, and digital signal input/output. The device is capable of both switching and linear operation, depending on its bias voltage.

The working principle of the DMP1022UFDE-7 depends on the switching action of the MOSFET. The gate electrode of the device is connected to an external control voltage, which is used to control the interface charge between the gate and the semiconductor channel. This interface charge is the main mechanism by which fields can be applied to the transistor and determine its operating characteristics. When a positive voltage is applied to the gate, the transistor is said to be “on”, and current flows from the source to the drain. If a negative voltage is applied to the gate, the transistor is said to be “off”, and current does not flow from the source to the drain.

The DMP1022UFDE-7 is commonly used in switching applications, linear amplifier applications, analog signal processing applications, and digital signal input/output applications. Its robust design makes it an ideal choice for applications involving high voltages and high currents. The DMP1022UFDE-7 is also suited for use in applications where power efficiency, low noise, and small size are important design considerations.

The DMP1022UFDE-7 is a single unipolar Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). It is used in a wide range of applications, including power-supply switching, high voltage amplifying, analog signal processing, and digital signal input/output. The working principle of the device depends on the interface charge present between the gate and the semiconductor channel, which is controlled by an external voltage applied to the gate. The DMP1022UFDE-7 is suitable for applications where power efficiency, low noise, and small size are important design considerations.

The specific data is subject to PDF, and the above content is for reference

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