DMP1080UCB4-7 Discrete Semiconductor Products |
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Allicdata Part #: | DMP1080UCB4-7DITR-ND |
Manufacturer Part#: |
DMP1080UCB4-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 12V U-WLB1010-4 |
More Detail: | P-Channel 12V 3.3A (Ta) 820mW (Ta) Surface Mount U... |
DataSheet: | DMP1080UCB4-7 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 4-UFBGA, WLBGA |
Supplier Device Package: | U-WLB1010-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 820mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 6V |
Vgs (Max): | -6V |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 500mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.3A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMP1080UCB4-7 is a part of a field of transistors and field effect transistors (FETs) known as single-gate MOSFETs. FETs are transistors in which the current flow is controlled by an input signal, allowing very fine control of the amount of current that flows through a circuit. The single-gate MOSFET is an electronic component that can be used to modulate the flow of current from the source to the drain of the component.The DMP1080UCB4-7 is a single-gate MOSFET, manufactured by Diodes Incorporated. It is designed to be used in high-current switch circuits, for applications where the switch needs to be controlled by a digital input signal. It has a voltage rating of 30V and an output current rating of 10A. The component is designed to have low on-resistance (RDS-on), offering improved power efficiency in the circuit.The component includes an input gate voltage (Vgs) that is used to control the gate-source voltage, allowing the component to be switched on and off. A typical operating condition for the component is Vgs = 0.6V. When the gate voltage is below this threshold, a field effect is created, blocking the flow of current from the drain to the source (or vice versa). When the gate voltage rises above 0.6V, the field effect is dissipated and current flow is allowed.The component also includes several other parameters that can affect its performance. These include the input capacitance (Ciss), the output capacitance (Coss), the threshold voltage (Vth), and the drain-source breakdown voltage (BVdss). These parameters provide valuable insight into the behavior of the component, allowing engineers to optimize the design for their specific application.The DMP1080UCB4-7 features a combination of features that make it uniquely suited for use in switch applications with digital inputs. It has high-capacity drain-source current, low threshold voltage, and low input capacitance, which results in low power consumption and good signal integrity. Furthermore, its low on-resistance provides improved power efficiency in the circuit. Combined, these features make the component an excellent choice for controlling the switch in high-current applications.In conclusion, the DMP1080UCB4-7 is an ideal choice for controlling switch circuits with digital inputs. It offers high-capacity drain-source current, low threshold voltage, and low input capacitance, resulting in low power consumption, good signal integrity, and improved power efficiency. It can be used in a variety of single-gate MOSFET applications, such as driving capacitive loads, controlling gate drivers, and providing voltage isolation.
The specific data is subject to PDF, and the above content is for reference
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