DMP1045UFY4-7 Allicdata Electronics
Allicdata Part #:

DMP1045UFY4-7DITR-ND

Manufacturer Part#:

DMP1045UFY4-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 12V 5.5A DFN2015-3
More Detail: P-Channel 12V 5.5A (Ta) 700mW (Ta) Surface Mount
DataSheet: DMP1045UFY4-7 datasheetDMP1045UFY4-7 Datasheet/PDF
Quantity: 6000
Stock 6000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1291pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 23.7nC @ 8V
Series: --
Rds On (Max) @ Id, Vgs: 32 mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMP1045UFY4-7 is a bilateral device that performs switch-like action, similar to a mechanical switch or transistor, but uses a channel of electrons and a current to control rather than a mechanical action. It is classified as a single field-effect transistor (FET), with multiple calls of the product number specified by the manufacturer. The model is designed as a voltage-controlled and is suitable for applications needing a high switching speed.

The device is a junction type field-effect transistor (JFET) made up of two p- and two n-type doped semiconducting layers. The material used to construct the transistor is the same as the material used to construct other semiconductor devices similarly, such as bipolar transistors and semiconductors diodes. The design has a gate that has an internal voltage divider, making it a JFET Transistor and a n-channel device. The gate is where the drain and source region meet, and has the function of controlling the current between the source and drain region.

The DMP1045UFY4-7 features a low gate resistance, which is useful for higher frequency applications. As a voltage-controlled device, the transistor operates based on how much gate voltage is applied, controlling how much or how little current passes through the device. When the gate voltage is negative, the device behaves like an insulator, preventing current from flowing while the gate voltage is positive. This gate voltage allows the device to switch rapidly between conducting and non-conducting modes, providing the capability to control a large current while transitioning in nanoseconds.

The device has an operational range of -25 to 125 degrees Celsius, has an IC of 2A, and a Pd of 96W. In terms of applications, the device can be used in many applications such as amplifier power supplies, voltage regulators, audio amplifiers, etc. It is also suitable for use in automotive applications, particularly for solenoid switches.

In summary, the DMP1045UFY4-7 is a single junction-type field effect transistor (JFET) which is voltage-controlled and suitable for high-frequency applications. With features such as a low gate resistance, this device is great for applications such as audio amplifiers, voltage regulators and more. Its operational range of -25 to 125 degrees Celsius and its IC of 2A, make this device suitable for a variety of applications including those in the automotive industry.

The specific data is subject to PDF, and the above content is for reference

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