| Allicdata Part #: | DMP10H400SEQ-13DITR-ND |
| Manufacturer Part#: |
DMP10H400SEQ-13 |
| Price: | $ 0.13 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET P-CH 100V 2.3A SOT223 |
| More Detail: | P-Channel 100V 2.3A (Ta), 6A (Tc) 2W (Ta), 13.7W (... |
| DataSheet: | DMP10H400SEQ-13 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.12800 |
| 10 +: | $ 0.12416 |
| 100 +: | $ 0.12160 |
| 1000 +: | $ 0.11904 |
| 10000 +: | $ 0.11520 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | SOT-223 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2W (Ta), 13.7W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1239pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 17.5nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 250 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2.3A (Ta), 6A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The DMP10H400SEQ-13 is a general purpose MOSFET with a single-level transistor construction. It\'s widely used in various applications, particularly in telecommunications and automotive, due to its low on-resistance and good switching characteristics.
A MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, is a type of FET (Field Effect Transistor) with a single-level transistor construction. Unlike a typical FET, the MOSFET relies on the application of a voltage to the gate terminal for its switching characteristics. When a current is directed to the gate, the resistance of the channel between the source and drain terminals is reduced. This current is used to control the flow of current through the channel. In contrast, a typical FET relies on a signal current applied to the source terminal for its switching characteristics.
The DMP10H400SEQ-13 MOSFET has a very low on-resistance at just 0.4 ohm. This feature is beneficial for applications with large power requirements, as it allows for more current to be passed through the channel. In addition, this MOSFET has a fast switching speed of just 13 ns, allowing it to effectively handle high frequency signals. It is also designed to withstand large power spikes, making it an ideal choice for audio and video applications.
In terms of applications, the DMP10H400SEQ-13 MOSFET is well suited for use in telecommunications and automotive devices. It is particularly useful for high-efficiency power conversion and can provide excellent performance in applications such as power supply and battery protection circuits.
The DMP10H400SEQ-13 MOSFET is an ideal choice for various applications, due to its low on-resistance, fast switching speed and good thermal performance. This single-level transistor construction makes the device well suited for use in high-efficiency power conversion applications, and its ability to withstand large power spikes makes it an ideal choice for audio and video applications.
The specific data is subject to PDF, and the above content is for reference
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DMP10H400SEQ-13 Datasheet/PDF