DMP1055USW-13

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	660mW
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1028pF @ 6V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	48 mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	3.8A (Ta)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The DMP1055USW-13 is a high-performance power Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) device. It has an integrated high-voltage gate drive circuit, low on-resistance, optimized body diode recovery characteristics, and a large drain-source breakdown voltage. It provides a wide range of applications, from motor control and power amplifier circuits to switching power supplies. It has a variety of features that make it suitable for a wide range of applications, such as high power efficiency, reliable performance, and a low on-resistance relative to its feature size.The DMP1055USW-13 is an N-channel MOSFET device, meaning it has an N-type semiconductor material at its gate. This means that the device can be used to control the flow of electric current from the source to the drain. The N-Channel MOSFET is capable of operating at high current levels and high capacitance values. It has an extremely low on-resistance, making it ideal for high frequency switching applications.The DMP1055USW-13 has a high efficiency gate drive, which makes it suitable for a variety of applications. The DMP1055USW-13 has a wide range of control voltage options, allowing for both application-specific and general-purpose uses. It also has a robust package design to protect the device from ESD and mechanical stresses.The working principle of the DMP1055USW-13 is simple. The gate of the device is connected to a voltage source, while the source and drain terminals are connected to the load. When a voltage source is applied to the gate, it controls the current flow between the source and the drain. The device can be used to either allow or prevent current flow, depending on the voltage applied to the gate.The body diode in the DMP1055USW-13 provides protection against short-circuiting and allows for reverse current flow when the MOSFET is off. The drain-source breakdown voltage is higher than the voltage that can be applied to the gate, allowing for a more reliable performance and protection against transistor failure. The DMP1055USW-13 has an integrated low-current gate threshold and is suitable for use with low voltage supplies.The DMP1055USW-13 can be used in a variety of applications, from fan control, motor control, and PWM power control to switching power supplies. It is also suitable for high-frequency switching applications, such as class D amplifiers and DC/DC converters. The device has an extremely low on-resistance and optimized body diode recovery characteristics, making it a great choice for applications where efficient power control is desired. Its wide range of control voltage options makes it suitable for many applications.In conclusion, the DMP1055USW-13 is a high-performance N-channel MOSFET device that is suitable for a variety of applications. Its integrated gate drive circuit, low on-resistance, optimized body diode recovery characteristics, and a large drain-source breakdown voltage provide reliable performances and a wide range of control voltage options. It is especially well suited for fan control, motor control, and PWM power control applications. It is also suitable for high-frequency switching applications, such as class D amplifiers and DC/DC converters.

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