Allicdata Part #: | DMP1011UCB9-7DITR-ND |
Manufacturer Part#: |
DMP1011UCB9-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 8V 10A U-WLB1515-9 |
More Detail: | P-Channel 8V 10A (Ta) 890mW (Ta) Surface Mount U-W... |
DataSheet: | DMP1011UCB9-7 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Package / Case: | 9-UFBGA, WLBGA |
Supplier Device Package: | U-WLB1515-9 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 890mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 4V |
Vgs (Max): | -6V |
Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 8V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMP1011UCB9-7 is a single JFET (Junction Field Effect Transistor) that combines the simple structure and low cost of a BJT (Bipolar Junction Transistor) with the performance characteristics of an FET (Field Effect Transistor). The DMP1011UCB9-7 features small size and large current capacity, making it ideal for a wide range of applications. This article will discuss the application fields and working principle of the DMP1011UCB9-7.
Application Fields
The small size of the DMP1011UCB9-7 makes it highly suitable for a variety of applications. It is particularly well-suited for high-voltage applications (up to 500V) and can be used to develop portable devices, such as cellular phones and digital cameras. The DMP1011UCB9-7 can also be used to develop audio-visual equipment, such as audio amplifiers, receivers and other audio circuitry. Furthermore, it is suitable for automotive and industrial applications, due to its ability to withstand high temperature and mechanical stresses.
Working Principles
The DMP1011UCB9-7 works by modulating the current flow between source, gate and drain terminals. The source and drain terminals are connected to the source and drain regions of the P-type semiconductor substrate, while the gate terminal is connected to the gate region of the substrate. The gate region of the substrate is separated from the source and drain regions via a thin layer of gate insulator, such as SiO2. By applying an electric field, current flow is controlled between the source and the drain.
When the gate terminal is left open, no current can pass through the device, resulting in an off state. When a voltage is applied to the gate terminal, up to 15V is allowed to flow through the device, resulting in an on state. In this state, the device can support maximum currents up to 500mA. As a result, the DMP1011UCB9-7 is much more efficient and has higher current capacity than other JFETs and FETs.
Conclusion
The DMP1011UCB9-7 is a single JFET with high current capacity and small size, making it highly suitable for a variety of applications, ranging from audio-visual equipment to automotive and industrial applications. It works by modulating the current flow between the source, gate and drain terminals, allowing up to 15V of power to flow when the gate terminal is energized. Ultimately, the DMP1011UCB9-7 is an efficient and cost-effective FET that is ideal for high-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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