DMP1012UFDF-7

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DMP1012UDF-7 Application Field and Working Principle

The DMP1012UDF-7 is a silicon N-Channel enhancement-mode power MOSFET (metal-oxide-semiconductor field-effect transistor) that is designed specifically for applications requiring low on-resistance and low gate charge. It’s operated with a single voltage supply and has an ultra-low gate-threshold voltage of just 0.43V. This power MOSFET is best suited for switching and linear applications, such as switching power supplies, DC-DC converters, and motor speed control applications.

Operating Principles

The operating principles of a MOSFET are related to its construction. The basic MOSFET structure consists of a MOS capacitor, which is created on a semiconductor substrate by two conducting regions made from a metal-oxide layer, separated by an insulator, usually silicon dioxide. An electric field is created between the two conducting regions when a voltage is applied between the metal-oxide regions. This electric field disrupts the normal flow of electrons and results in current flow through the MOSFET.

The DMP1012UDF-7 has an ultra-low gate voltage threshold of just 0.43V, which means that it can switch fast and perform at its rated current at low operating voltages. This power MOSFET also features an ultra-high input impedance, which allows it to function efficiently in power switching applications. The MOSFET also features excellent thermal characteristics, low gate-charge, and low on-resistance.

Applications

The DMP1012UDF-7 is designed for use in switching and linear power supplies, DC-DC converters, motor speed control applications, and other high-speed circuit designs. Its high input impedance and ultra-low gate voltage threshold make it an ideal choice for applications that require fast switching times. Additionally, the DMP1012UDF-7 is ideal for applications where low on-resistance and low gate charge are important. The MOSFET is also suitable for use in noise sensitive applications, as it has excellent thermal characteristics and is resistant to EMI (electromagnetic interference).

The DMP1012UDF-7 is available in a TO-220 package and has an on-state Drain-Source current of 12A and an off-state leakage current of <5µA. The operating temperature range is -40° to 125°C. This power MOSFET is also RoHS compliant, and its electrical and thermal data is available in the manufacturer’s datasheet.

Conclusion

The DMP1012UDF-7 is a high performance, low gate-threshold powered MOSFET that is designed for fast switching and linear applications. Its ultra-high input impedance and low on-resistance make it a suitable choice for powering switching power supplies, DC-DC converters, motor speed control applications, and other high-speed circuit designs.

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