EPC2045ENGRT Allicdata Electronics

EPC2045ENGRT Discrete Semiconductor Products

Allicdata Part #:

917-EPC2045ENGRTR-ND

Manufacturer Part#:

EPC2045ENGRT

Price: $ 2.02
Product Category:

Discrete Semiconductor Products

Manufacturer: EPC
Short Description: TRANS GAN 100V BUMPED DIE
More Detail: N-Channel 100V 16A (Ta) Surface Mount Die
DataSheet: EPC2045ENGRT datasheetEPC2045ENGRT Datasheet/PDF
Quantity: 7500
2500 +: $ 1.84045
Stock 7500Can Ship Immediately
$ 2.02
Specifications
Series: eGaN®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 50V
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
Description

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The EPC2045ENGRT device is a higher power MOSFET solution from the EPC energy-efficient family of transistors. This particular device combines improved gate charge density, a new high frequency gate charge measurement capability, improved linear capacitance, and remote sensing and thermal shut-off capability in one package. These features make it an ideal choice for applications requiring high current, high speed, and high temperature switching. It is also a good choice for power applications in automotive, datacom, medical, industrial, and consumer electronics markets.

The EPC2045ENGRT is a ne-channel Insulated Gate Bipolar Transistor (IGBT) that is a normally-on power device. It uses insulated-gate control in order to provide wide bandgap characteristics. It has a low on-resistance and provides a high controllable switching speed. The device can handle low voltages of between 8V and 20V and can deliver up to 100A of continuous current. Additionally, to maximize efficiency, it has a thermal shut-off mechanism which will turn the device off if an over-temperature condition is detected.

The device is designed to provide precision control of power and current during switching applications. The gate charge density is higher than similar devices, which allows the device to operate at higher frequencies. Additionally, the device offers a new High Frequency Gate Charge Measurement capability. It also uses a high linear capacitance which enables the device to handle higher currents without degradation.

The EPC2045ENGRT also has an on-board remote sensing capability which means that it can be controlled from a remote location. The remote sensing circuit uses current sensing to provide feedback on the device\'s operating temperature. This prevents the device from entering an over-temperature situation and ensures that its maximum performance is maintained.

The EPC2045ENGRT is a great choice for high current and high voltage applications. It combines high current capability with a wide range of operating temperatures, allowing it to be used in automotive, datacom, consumer electronics, medical and industrial markets. In addition to its superior characteristics, its on-board remote sensing and thermal shut-off feature prevents the device from entering an over-temperature situation.

The specific data is subject to PDF, and the above content is for reference

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