EPC2047ENGRT Discrete Semiconductor Products |
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Allicdata Part #: | 917-EPC2047ENGRTR-ND |
Manufacturer Part#: |
EPC2047ENGRT |
Price: | $ 4.24 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN 200V BUMPED DIE |
More Detail: | N-Channel 200V 32A (Ta) Surface Mount Die |
DataSheet: | EPC2047ENGRT Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 3.85181 |
Series: | eGaN® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 7mA |
Gate Charge (Qg) (Max) @ Vgs: | 10.2nC @ 5V |
Vgs (Max): | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 1050pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
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EPC2047ENGRT is a type of enhancement-mode, insulated-gate field-effect transistor (IGFET) meant for use in power electronics, motor control, and general-purpose switching applications. An IGFET is a transistor with an insulated gate and no current-driven control terminals. IGFETs rely on a four-terminal connection that interacts with a channel of transferable carriers to control current flow polarized by physical input voltages and currents.
The EPC2047ENGRT is a 60V, 6W, 30A single N-Channel Super Junction MOSFET module. It features high performance, robustness against electrostatic discharge, and an ultra-low on-resistance. Beyond these qualities, it offers superior heat dissipation and EMC (electromagnetic compatibility). It is also capable of switching rapidly. Additionally, the EPC2047ENGRT has a temperature compatible design that allows it to perform optimally in high-temperature environments, with a maximum junction temperature of 175°C.
The working principle behind the EPC2047ENGRT is based on its four-terminal connection. The four terminals—the source, the gate, the drain, and the body—interact with each other via a transfer of either electrons or holes, depending on the type of semiconductor material used for the IGFET construction. The source and drain receive input voltages that are then translated into polarizing forces. The gate and body interact to control current flow through the channel. This flow of current, regulated by the gate and body, is what allows the IGFET to act as an on-off switch.
Overall, the EPC2047ENGRT is an efficient and reliable solution for use in power electronics, motor control, and switching applications. Its performance, robustness, and wide temperature tolerance make it ideal for high-performance and high-temperature applications. Its four-terminal, IGFET-based design allows it to act as an on-off switch with robust control, providing a host of control possibilities when appropriately used. Ultimately, its performance, flexibility, and reliability make it an ideal choice for its intended application fields.
The specific data is subject to PDF, and the above content is for reference
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