EPC2040ENGRT Discrete Semiconductor Products |
|
Allicdata Part #: | 917-EPC2040ENGRTR-ND |
Manufacturer Part#: |
EPC2040ENGRT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN 15V BUMPED DIE |
More Detail: | N-Channel 15V 3.4A (Ta) Surface Mount Die |
DataSheet: | EPC2040ENGRT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | eGaN® |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 15V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 1.5A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 0.93nC @ 5V |
Vgs (Max): | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 100pF @ 6V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
<p>The EPC2040ENGRT is an high performance gallium nitride (GaN) enhancement mode transistor specifically designed for high-efficiency and high-frequency power conversion applications. This device provides superior efficiency and performance when compared to traditional silicon-based power transistors. In this article, we will explore the applications of the EPC2040ENGRT and its working principle.</p><h2>EPC2040ENGRT Applications</h2><p>The EPC2040ENGRT transistor is specifically designed to be used in high frequency, high efficiency power conversion applications. It is ideal for high power applications such as voltage conversion, switching power supplies, LED drive topologies, programmable logic controllers, automotive, and motor control applications. It is also suitable for use in communication systems such as microwave point to point radios, amplifiers and ane range of other applications where its high frequency, high efficiency and low on-resistance characteristics make it an ideal solution.</p><p>The EPC2040ENGRT transistor features a high surge capability of up to 200A peak current, which makes it ideal for use in high-power applications. It has a low gate threshold voltage, allowing for easy operation and high switch speeds. The device also features a low EMI noise profile, ensuring that the device is compliant with current EMI regulations. The gate drive of the EPC2040ENGRT is optimized for high speed switching and improved performance.</p><h2>EPC2040ENGRT Working Principle</h2><p>The EPC2040ENGRT is an enhancement mode transistor, which operates in the enhancement mode of operation. This means that for the device to be ‘on’, the gate must be given a positive voltage. This causes electrons to be injected into the channel, which facilitates current flow from drain to source. When the gate is given a low or negative voltage, the current will stop flowing and the device will be in the ‘off’ state.</p><p>The device is specifically designed to provide maximum efficiency and reduces switching losses. The on-resistance of the EPC2040ENGRT is low, allowing for high current conduction. The device has high switching speeds, allowing for faster load changes and improved system efficiency. The gate threshold voltage is also low and the gate capacitance is minimized, allowing for improved operation and efficient operation at higher frequencies.</p><h2>Conclusion</h2><p>The EPC2040ENGRT is an high performance gallium nitride (GaN) enhancement mode transistor designed for high efficiency and high frequency power conversion applications. The device is suitable for use in high power applications such as voltage conversion, switching power supplies, LED drive topologies, programmable logic controllers, automotive and motor control applications. It is also suited for use in communication systems such as microwave point to point radios, amplifiers and ane range of other applications. Furthermore, the device operates in the enhancement mode of operation and features a low gate threshold voltage, high surge capability, low on-resistance, low EMI noise profile, and high switching speeds.</p>The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "EPC2" Included word is 40
Part Number | Manufacturer | Price | Quantity | Description |
---|
EPC2023ENG | EPC | 0.0 $ | 1000 | TRANS GAN 30V 60A BUMPED ... |
EPC2038ENGR | EPC | 0.0 $ | 1000 | TRANS GAN 100V 0.5A BUMPE... |
EPC2020ENGR | EPC | 0.0 $ | 1000 | TRANS GAN 60V 60A BUMPED ... |
EPC2039ENGRT | EPC | 0.0 $ | 1000 | TRANS GAN 80V 6.8A BUMPED... |
EPC2025 | EPC | 0.0 $ | 1000 | TRANS GAN 300V 150MO BUMP... |
EPC2016 | EPC | 0.0 $ | 1000 | TRANS GAN 100V 11A BUMPED... |
EPC2018 | EPC | 0.0 $ | 1000 | TRANS GAN 150V 12A BUMPED... |
EPC2037ENGR | EPC | 0.0 $ | 1000 | TRANS GAN 100V BUMPED DIE... |
EPC2023ENGR | EPC | 0.0 $ | 1000 | TRANS GAN 30V 60A BUMPED ... |
EPC2040ENGRT | EPC | 0.0 $ | 1000 | TRANS GAN 15V BUMPED DIEN... |
EPC2007 | EPC | 0.0 $ | 1000 | TRANS GAN 100V 6A BUMPED ... |
EPC2010 | EPC | 0.0 $ | 1000 | TRANS GAN 200V 12A BUMPED... |
EPC2012 | EPC | 0.0 $ | 1000 | TRANS GAN 200V 3A BUMPED ... |
EPC2015 | EPC | 0.0 $ | 1000 | TRANS GAN 40V 33A BUMPED ... |
EPC2032ENGRT | EPC | 0.0 $ | 1000 | TRANS GAN 100V 48A BUMPED... |
EPC2033ENGRT | EPC | 0.0 $ | 1000 | TRANS GAN 150V 31A BUMPED... |
EPC2034ENGRT | EPC | 0.0 $ | 1000 | TRANS GAN 200V 31A BUMPED... |
EPC2036ENGRT | EPC | 0.0 $ | 1000 | MOSFET N-CH 100V 1.7A DIE... |
EPC2050ENGRT | EPC | 2.62 $ | 1000 | TRANS GAN 350V BUMPED DIE... |
EPC2001 | EPC | 2.76 $ | 47000 | TRANS GAN 100V 25A BUMPED... |
EPC2047ENGRT | EPC | 4.24 $ | 1000 | TRANS GAN 200V BUMPED DIE... |
EPC2100ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 30V BUMPE... |
EPC2101ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 60V BUMPE... |
EPC2102ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 60V BUMPE... |
EPC2103ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 80V BUMPE... |
EPC2104ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 100V BUMP... |
EPC2105ENG | EPC | 0.0 $ | 1000 | TRANS GAN 2N-CH 80V BUMPE... |
EPC2107ENGRT | EPC | 0.64 $ | 1000 | TRANS GAN 3N-CH 100V BUMP... |
EPC2LC20EM | Intel FPGAs/... | 0.0 $ | 1000 | IC FPGA FBGA |
EPC2LI20NGA | Intel FPGAs/... | 0.0 $ | 1000 | IC FPGA FBGA |
EPC2XXA | Intel FPGAs/... | 0.0 $ | 1000 | IC FPGA FBGA |
EPC2202 | EPC | -- | 27500 | GANFET N-CH 80V 18A DIEN-... |
EPC2014 | EPC | 0.69 $ | 9000 | TRANS GAN 40V 10A BUMPED ... |
EPC2203 | EPC | -- | 27500 | GANFET N-CH 80V 1.7A 6SOL... |
EPC2036 | EPC | -- | 535779 | TRANS GAN 100V 1A BUMPED ... |
EPC2035 | EPC | 0.27 $ | 10000 | TRANS GAN 60V 1A BUMPED D... |
EPC2038 | EPC | -- | 180000 | TRANS GAN 100V 2.8OHM BUM... |
EPC2037 | EPC | 0.41 $ | 127500 | TRANS GAN 100V 550MOHM BU... |
EPC2014C | EPC | -- | 77500 | TRANS GAN 40V 10A BUMPED ... |
EPC2039 | EPC | -- | 135000 | TRANS GAN 80V BUMPED DIEN... |
Latest Products
IRFL31N20D
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
IXTT440N055T2
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
IXTH14N80
MOSFET N-CH 800V 14A TO-247N-Channel 800...
IXFT23N60Q
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
IXTT72N20
MOSFET N-CH 200V 72A TO-268N-Channel 200...
IXFT9N80Q
MOSFET N-CH 800V 9A TO-268N-Channel 800V...