EPC2039ENGRT Discrete Semiconductor Products |
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Allicdata Part #: | 917-EPC2039ENGRTR-ND |
Manufacturer Part#: |
EPC2039ENGRT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN 80V 6.8A BUMPED DIE |
More Detail: | N-Channel 80V 6.8A (Ta) Surface Mount Die |
DataSheet: | EPC2039ENGRT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | eGaN® |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 6.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 6A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 2mA |
Gate Charge (Qg) (Max) @ Vgs: | 2nC @ 5V |
Vgs (Max): | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 210pF @ 40V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
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EPC2039ENGRT devices belong to the field of transistors, FETs and MOSFETs, more specifically single. They are semiconductor components used for Control and Switching Power Applications. EPC2039ENGRT devices are both reliable and cost effective.
EPC2039ENGRT transistors consist of two metal-oxide-semiconductor layers, with a source (S) and gate (G) separated by a channel (C). The gate is insulated from the source and drain using a highly dielectric, low-k dielectric material such as silicon dioxide. The gate is typically controlled by an externally applied control voltage, making them ideal for a wide range of power application needs.
EPC2039ENGRT transistors are typically fabricated using well-developed modern technologies such as thermal oxidation and ion assisted deposition. The fabrication process ensures that the gate stays insulated clean and functioning as it should. The source and drain contacts are also carefully isolated with an oxidation layer to maintain their electrical characteristics.
The way in which EPC2039ENGRT transistors work is by generating an electric field that acts as a gate between the source and the drain. The electric field is then used to control the current that passes between the source and the drain. The transistors offer both high-performance switching capability and excellent power handling capacities.
EPC2039ENGRT transistors are highly reliable and cost effective, as well as offering excellent switching performance and power handling capacity. Their electrical characteristics can be controlled by an externally applied control voltage, making them ideal for many power application needs. Furthermore, their high tolerance to temperature, voltage and optical radiation makes them a great choice for various types of applications.
EPC2039ENGRT transistors have the capacity to switch off when the gate voltage is lower than the source voltage. They also provide fast switching of the current without many losses, ensuring that power is efficiently used. This makes them highly suitable for applications such as motor control, radio frequency (RF) switching, and power management.
EPC2039ENGRT transistors are fast and reliable, making them an ideal choice for many different applications. They are cost effective, provide high switching performance and power handling capacity, and are highly tolerant to temperature, voltage and optical radiation. Therefore, EPC2039ENGRT transistors can be used for a variety of different control and power applications.
The specific data is subject to PDF, and the above content is for reference
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