EPC2036ENGRT Discrete Semiconductor Products |
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Allicdata Part #: | 917-EPC2036ENGRTR-ND |
Manufacturer Part#: |
EPC2036ENGRT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | MOSFET N-CH 100V 1.7A DIE |
More Detail: | N-Channel 100V 1.7A (Ta) Surface Mount Die |
DataSheet: | EPC2036ENGRT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 73 mOhm @ 1A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 600µA |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 50V |
Vgs (Max): | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 90pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
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EPC2036ENGRT is a type of advanced field effect transistor (FET) used in many electronic applications. It is a single MOSFET, or metal-oxide-semiconductor FET, which is a voltage-controlled semiconductor switch that can be either an amplifier or a switch depending on its operating conditions.
The main reason why EPC2036ENGRT is so widely used is due to its extremely low on-resistance. On resistance is the resistance a device presents when it is turned on. As such, EPC2036ENGRT has very low on-resistance and high off-resistance, meaning that it does not lose too much power when it is turned on, and is able to be switched off quickly. This makes it ideal for a variety of applications.
The most common application field for EPC2036ENGRT is in power management. It is often used to rapidly switch heavy loads on and off, such as those used in consumer electronics. It is also used to control the speed of devices such as blowers and pumps, as well as in digital switching systems, LED lighting, and medical devices. The low on-resistance of EPC2036ENGRT also makes it suitable for use in high-current applications, such as in automotive power train control.
The working principle of EPC2036ENGRT is based on the electrostatic principle. The gate of the transistor is made of a thin layer of silicon dioxide, and is insulated from the rest of the transistor by an oxide barrier. This barrier is created by applying positive and negative voltages to the gate and source, respectively. When these two voltages are applied, the electrostatic field created from the two oppositely-charged gates repels electrons from the gate-and-source surface and prevents them from entering the transistor. This prevents current from entering and flowing through the transistor and prevents it from switching on.
When a positive voltage is applied to the gate, it attracts electrons to the gate-and-source surface, creating a conductive path between the gate and the drain. This allows current to flow through the transistor and switch on, completing the circuit. The amount of current that is allowed to flow through the transistor can be controlled by the amount of voltage applied to the gate. This makes EPC2036ENGRT an ideal device for applications where precise control of current is required.
EPC2036ENGRT is a very robust, versatile, and efficient device, which makes it a popular choice in many different applications. It is a single MOSFET device, which is capable of controlling large loads, and has low gate-leakage current, making it suitable for use in many high-performance systems. It is also a very reliable device, offering years of trouble-free service.
The specific data is subject to PDF, and the above content is for reference
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