EPC2202 Discrete Semiconductor Products

Series:	Automotive, AEC-Q101, eGaN®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):	80V
Current - Continuous Drain (Id) @ 25°C:	18A
Drive Voltage (Max Rds On, Min Rds On):	5V
Rds On (Max) @ Id, Vgs:	17 mOhm @ 11A, 5V
Vgs(th) (Max) @ Id:	2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:	4nC @ 5V
Vgs (Max):	+5.75V, -4V
Input Capacitance (Ciss) (Max) @ Vds:	415pF @ 50V
FET Feature:	--
Power Dissipation (Max):	--
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	Die Outline (6-Solder Bar)
Package / Case:	Die

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EPC2202 is a type of enhancement-mode power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is a voltage-controlled electronic switch. It is widely used in the radiofrequency (RF) and power applications because of its low driving voltage and high switching speed, making it ideal for use in mobile phones, wireless communication devices, and consumer electronics.It has an ultra-low on-resistance combined with an exceptionally low input capacitance and fast switching. This makes it ideal for use in high frequency applications such as power amplifiers, power converters, and smart-grid applications. Furthermore, it is available in a variety of packages such as a surface-mount, plastic DIP, or through-hole package. This MOSFET has a threshold voltage of 4 V, and its maximum drain source voltage is typically 225 V. The RDS(on) is typically 22 mOhms at VGS = 4.5 V and 25°C, and its typical drain current is 38 A. This makes EPC2202 suitable for use in a variety of applications such as switching power converters, low-noise amplifiers, and even power management. The working principle of EPC2202 is based on two-terminal metal-oxide field-effect technology. It consists of a channel substrate, a metal-oxide semiconductor, and an ohmic gate contact operating in depletion mode. The metal-oxide semiconductor is a sandwiched structure that consists of two metal oxide layers separated by a silicon dioxide layer. The semiconductor is typically heavily doped with P-type semiconductor material and lightly doped with N-type semiconductor material. This doped material creates n-type and p-type regions on either side of the oxide layer, creating a depletion region. When a positive voltage is applied to the gate, the electrons in the n-type region are attracted to the adjacent p-type region, creating a depletion region. This change in the depletion region causes the current to stop flowing through the channel, switching off the EPC2202.In addition to its use in power and RF applications, the EPC2202 has applications in motor control and power management systems. It can be used to control the speed and direction of a motor, as well as for high-precision switching. Its fast switching capability makes it ideal for powering LED systems, providing stable and efficient power delivery. It is used for a variety of applications in energy management, such as in solar power control systems and power factor correction systems. It is also used in motor control systems to provide precise switching and motor direction control. In addition, it is used to power motor drives, providing smooth switching and high efficiency. In summary, EPC2202 is an enhanced-mode MOSFET that is a voltage-controlled electronic switch. It provides low on-resistance, low input capacitance, and fast switching capability. It has a low threshold voltage of 4 V, and its drain source voltage typically ranges from 225 V. It is used in a variety of applications such as power converters, low-noise amplifiers, power management, motor control, and LED systems.

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