EPC2018 Discrete Semiconductor Products |
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Allicdata Part #: | 917-1034-2-ND |
Manufacturer Part#: |
EPC2018 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | EPC |
Short Description: | TRANS GAN 150V 12A BUMPED DIE |
More Detail: | N-Channel 150V 12A (Ta) Surface Mount Die |
DataSheet: | EPC2018 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | eGaN® |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 150V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 6A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 5V |
Vgs (Max): | +6V, -5V |
Input Capacitance (Ciss) (Max) @ Vds: | 540pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Electronic Product Code (EPC) is a protocol that enables devices to communicate with each other using a single platform. It enables devices to communicate with one another in a global system or network, without the need for a manual input. EPC2018 represents the latest version of the protocol, and is an open-source distributed communication protocol that is maintained by the EPC Global Alliance.
The EPC 2018 application field and working principle can be divided into two categories: Transistors and Field Effect Transistors (FETs). Transistors can be classified into two types: junction transistors (JT) and insulated gate transistors (IGT). JT transistors are used mainly for amplification and switching applications, while IGT transistors are mainly used for analog circuit applications. FETs, on the other hand, can also be classified into two major categories: MOSFETs and Single-Event Upset (SEU) FETs. MOSFETs are used for power switching applications, while SEU FETs are mainly used for high-speed logic circuit applications.
Transistors are the building blocks of most electronic circuits today, and their basic operation is based on the flow of electric current through a semiconductor material. Transistors consist of three terminals – the base, the collector, and the emitter. When a current is applied across the base and emitter terminals, it creates a small current between the collector and emitter terminals, allowing current flow through the transistor. This is called active or forward biasing of the transistor.
FETs are similar to transistors, but operate on a different principle. They are three terminal devices consisting of a source, a gate and a drain. The gate terminal is used to control the flow of electrons through the FET. When a voltage applied to the gate terminal is of a particular value, the FET is “ON”, while when the voltage is lower than the “ON” voltage, the FET is “OFF”. This process is called the gate bias, or threshold voltage.
MOSFETs are a type of FETs that are used in power switching applications. MOSFETs are known for their high switching speed and low power consumption. When a MOSFET is switched “ON”, it acts as a switch, allowing current to pass through it. When it is switched “OFF”, no current is allowed to flow through the MOSFET. MOSFETs are typically used in applications such as power management, motor control and power conversion.
Single-Event Upset (SEU) FETs are used in high-speed logic circuit applications. These are typically used in high circuit densities, where the operating voltage is small and switching speed needs to be fast. SEU FETs work by creating a pulse in the output that is normally very short in duration, but still long enough to affect a logic circuit in the output. This makes them particularly useful in high-speed logic circuits, where the pulse generated by the SEU FET is enough to trigger the circuit to change its state, without the need for an external pulse source.
The EPC 2018 application field and working principle involve various types of transistors and FETs, and can be used to achieve efficient control and communication. The different types of transistors and FETs can be used in various combinations, depending on the application. Therefore, it is important to understand the basic principles behind each type of transistor and FET and how they interact with one another, in order to make the most of EPC 2018 technology.
The specific data is subject to PDF, and the above content is for reference
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